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Inventor

Tsai-Yu Huang

Inventor
Hsinchu County, TW

Overview

22→
Patents
2004–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10DInorganic electric semiconductor devices14%
H01LSemiconductor devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01GCapacitors8%
C01GCompounds containing metals not covered by subclasses c01d or c01f4%
C23CCoating metallic material4%
H05KPrinted circuits4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
PatentTitleYear
10,770,159Antifuse device and method of operating the same202010,698,323Test key layout and method of monitoring pattern misalignments using test keys202010,141,035Memory cell with a read selection transistor and a program selection transistor201810,008,381Constructions comprising rutile-type titanium oxide; and methods of forming and utilizing rutile-type titanium oxide20189,704,816'Active region structure and forming method thereof'20179,209,013'Constructions comprising thermally conductive stacks containing rutile-type titanium oxide'20159,159,731'Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material'20159,030,015'Three dimensional stacked structure for chips'20158,936,991'Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material'20158,927,441'Methods of forming rutile titanium dioxide'20158,866,281'Three-dimensional integrated circuits and fabrication thereof'20148,748,283'Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material'20148,609,553'Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures'20138,564,095'Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same'20138,518,486'Methods of forming and utilizing rutile-type titanium oxide'20138,421,193'Integrated circuit device having through via and method for preparing the same'20138,420,208'High-k dielectric material and methods of forming the high-k dielectric material'20137,358,134'Split gate flash memory cell and manufacturing method thereof'20086,897,521'Split gate flash memory cell'20056,888,193'Split gate flash memory and formation method thereof'20056,852,637'Method of etching a mask layer and a protecting layer for metal contact windows'20056,720,219'Split gate flash memory and formation method thereof'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2014Patents assigned to NANYA TECHNOLOGY CORP (5)· patent assignee history
2004–2020Based in Hsinchu County, TW· patent location history
2013–2018Patents assigned to MICRON TECHNOLOGY INC (10)· patent assignee history
2013–2015Patents assigned to HUANG TSAI-YU (6)· patent assignee history
2013–2015Based in Taipei, TW· patent location history
2013–2018Based in Boise, ID, US· patent location history
2013–2015Based in Zhubei City, TW· patent location history
2014Based in Taoyuan County, TW· patent location history
2017–2020Patents assigned to FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD (4)· patent assignee history
2017–2020Patents assigned to UNITED MICROELECTRONICS CORP (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC102013–2018
HUANG TSAI-YUself62013–2015
NANYA TECHNOLOGY CORP52004–2014
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD42017–2020
UNITED MICROELECTRONICS CORP42017–2020
Locations
LocationPatentsSpan
Hsinchu County, TW92004–2020
Taipei, TW72013–2015
Boise, ID, US32013–2018
Zhubei City, TW22013–2015
Taoyuan County, TW12014