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Inventor

Dae-Joong Won

Inventor
Suwon-si, KR

Overview

4→
Patents
2007–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices57%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H10BElectronic memory devices14%
PatentTitleYear
8,710,594'Integrated circuit devices having conductive structures with different cross sections'20148,124,512'Methods of forming integrated circuit devices having different gate electrode cross sections'20127,534,708'Recessed-type field effect transistor with reduced body effect'20097,300,845'Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2014Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
2007–2009Based in Seoul, KR· patent location history
2012–2014Patents assigned to WON DAE-JOONG (2)· patent assignee history
2012–2014Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD42007–2014
WON DAE-JOONGself22012–2014
Locations
LocationPatentsSpan
Suwon-si, KR22012–2014
Seoul, KR22007–2009