Inventor
SANGHYUN JO
Inventor
KR
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10BElectronic memory devices12%
H10KOrganic electric solid-state devices7%
G11CStatic stores5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
B82YSpecific uses or applications of nanostructures2%
G06NComputing arrangements based on specific computational models2%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution2%
PatentTitleYear
12,568,660Electronic devices and methods of manufacturing the same202612,527,038Electronic device including ferroelectric thin film structure202612,457,792Thin film structure and electronic device including the same202512,382,670Thin film structure and semiconductor device comprising the same202512,369,361Integrated circuit including transistors and a method of manufacturing the same202512,283,629Ferroelectric thin-film structure and electronic device including the same202512,266,710Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device202512,230,711Electronic device and method of manufacturing the same202512,224,346Domain switching devices and methods of manufacturing the same202512,206,009Electronic devices and methods of manufacturing the same202512,191,311Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit202512,176,413Ferroelectric structure including a ferroelectric film having a first net polarization oriented toward a first polarization enhancement film and semiconductor device including the same202412,132,109Ferroelectric semiconductor device and method of extracting defect density of the same202412,132,133Avalanche photodetectors and image sensors including the same202412,107,140Thin film structure and semiconductor device including the same202412,100,749Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures202412,094,971Electronic device including ferroelectric layer202412,089,416Electronic device and method of manufacturing the same202411,973,142Integrated circuit including transistors and a method of manufacturing the same202411,908,918Electronic device and method of manufacturing the same202411,894,469Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same202411,887,989Semiconductor device including ferroelectric material, neuromorphic circuit including the semiconductor device, and neuromorphic computing apparatus including the neuromorphic circuit202411,888,016Image sensor for high photoelectric conversion efficiency and low dark current202411,862,705Electronic devices and methods of manufacturing the same202411,848,366Electronic device and method of manufacturing the same202311,843,037Semiconductor device and method of manufacturing the semiconductor device202311,824,119Domain switching devices and methods of manufacturing the same202311,824,118Electronic device and method of manufacturing the same202311,804,536Thin film structure and semiconductor device including the same202311,721,781Avalanche photodetectors and image sensors including the same202311,711,923Electronic device and method of manufacturing the same202311,701,728Logic switching device and method of manufacturing the same202311,676,999Electronic devices and methods of manufacturing the same202311,677,025Electronic device including ferroelectric layer202311,646,375Ferroelectric thin-film structure and electronic device including the same202311,626,489Optical sensor and image sensor including graphene quantum dots202311,600,712Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same202311,538,918Electronic device and method of manufacturing the same202211,527,635Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures202211,527,646Domain switching devices and methods of manufacturing the same202211,522,082Electronic device and method of manufacturing the same202211,417,790Avalanche photodetectors and image sensors including the same202211,417,763Integrated circuit including transistors and a method of manufacturing the same202211,367,799Broadband multi-purpose optical device and methods of manufacturing and operating the same202211,349,026Electronic device including ferroelectric layer202211,305,365Logic switching device and method of manufacturing the same202211,239,274Image sensor for high photoelectric conversion efficiency and low dark current202211,222,953Optical sensor and image sensor including graphene quantum dots202211,177,283Electronic device and method of manufacturing the same202111,145,731Electronic device and method of manufacturing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to SAMSUNG ELECTRONICS CO LTD (50)· patent assignee history
2021–2026Based in KR· patent location history
2024Patents assigned to RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 50 | 2021–2026 |
| RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 50 | 2021–2026 |