Inventor
Jun Hu
Inventor
San Bruno, CA, US
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters4%
F28FDetails of heat-exchange and heat-transfer apparatus, of general application1%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems1%
H03KPulse technique1%
H05KPrinted circuits1%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
10,998,264Dual-gate trench IGBT with buried floating P-type shield202110,950,699Termination for vertical trench shielded devices202110,923,588SGT MOSFET with adjustable CRSS and CISS202110,896,959Top structure of super junction MOSFETs and methods of fabrication202110,804,355Dual-gate trench IGBT with buried floating P-type shield202010,622,445Epitaxial structure of trench MOSFET devices202010,199,455Dual-gate trench IGBT with buried floating P-type shield201910,038,089SGT MOSFET with adjustable CRSS and CISS20189,865,678'High voltage field balance metal oxide field effect transistor (FBM)'20189,711,631'Dual trench-gate IGBT structure'20179,666,666'Dual-gate trench IGBT with buried floating P-type shield'20179,620,630'Injection control in semiconductor power devices'20179,502,547'Charge reservoir IGBT top structure'20169,450,083'High voltage field balance metal oxide field effect transistor (FBM)'20169,318,587'Injection control in semiconductor power devices'20169,293,559'Dual trench-gate IGBT structure'20169,160,264'Initial rotor position detection and start-up system for a dynamoelectric machine'20159,129,822'High voltage field balance metal oxide field effect transistor (FBM)'20159,123,770'Charge reservoir IGBT top structure'20159,048,282'Dual-gate trench IGBT with buried floating P-type shield'20159,000,481'Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage'20158,907,414'High voltage fast recovery trench diode'20148,896,131'Cascode scheme for improved device switching behavior'20148,822,300'Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage'20148,785,279'High voltage field balance metal oxide field effect transistor (FBM)'20148,710,585'High voltage fast recovery trench diode'20148,698,196'Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage'20148,575,685'Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path'20138,042,605'Heat conduction device'20117,952,896'Power conversion architecture with zero common mode voltage'20117,577,545'Method and system for estimating rotor angular position and rotor angular velocity at low speeds or standstill'20097,072,790'Shaft sensorless angular position and velocity estimation for a dynamoelectric machine based on extended rotor flux'20067,042,728'Clamping structure and heat dissipating module using same'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2015Based in Roscoe, IL, US· patent location history
2006Based in Dongguan, CN· patent location history
2011Based in Chong Qing, CN· patent location history
2011Based in Rockford, IL, US· patent location history
2013–2021Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (22)· patent assignee history
2013–2021Patents assigned to HU JUN (10)· patent assignee history
2013–2019Patents assigned to BOBDE MADHUR (6)· patent assignee history
2013–2019Patents assigned to YILMAZ HAMZA (5)· patent assignee history
2013–2014Patents assigned to BHALLA ANUP (4)· patent assignee history
2013–2021Based in San Bruno, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ALPHA & OMEGA SEMICONDUCTOR | 22 | 2013–2021 |
| HU JUNself | 10 | 2013–2021 |
| BOBDE MADHUR | 6 | 2013–2019 |
| YILMAZ HAMZA | 5 | 2013–2019 |
| BHALLA ANUP | 4 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Bruno, California, US | 27 | 2013–2021 |
| Roscoe, Illinois, US | 3 | 2006–2015 |
| Chong Qing, CN | 1 | 2011 |
| Rockford, Illinois, US | 1 | 2011 |
| Dongguan, CN | 1 | 2006 |