Inventor
Katsumi Yamanoguchi
Inventor
Tokyo, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices67%
H01LSemiconductor devices33%
PatentTitleYear
9,954,087Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor20188,853,666'Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor'20147,863,648'Field effect transistor'20117,800,131'Field effect transistor'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2011Patents assigned to NEC CORP (2)· patent assignee history
2010–2018Based in Tokyo, JP· patent location history
2014–2018Patents assigned to RENESAS ELECTRONICS CORP (2)· patent assignee history
2014Patents assigned to ANDO YUJI (1)· patent assignee history
2014Patents assigned to INOUE TAKASHI (1)· patent assignee history
2014Patents assigned to KURODA NAOTAKA (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 2 | 2010–2011 |
| RENESAS ELECTRONICS CORP | 2 | 2014–2018 |
| ANDO YUJI | 1 | 2014 |
| INOUE TAKASHI | 1 | 2014 |
| KURODA NAOTAKA | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 4 | 2010–2018 |