Inventor
TING YU CHEN
Inventor
TW
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
H01LSemiconductor devices22%
G06FElectric digital data processing17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H03KPulse technique7%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
G01RMeasuring electric variables2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light1%
PatentTitleYear
12,568,685Integrated circuit202612,461,150Testing circuit202512,443,782Metal cut region location method202512,393,762Method for generating a layout diagram of a semiconductor device including power-grid- adapted route-spacing202512,300,699Integrated circuit202512,254,261Method of designing an integrated circuit and system for designing integrated circuit202512,255,142Cell structure with intermediate metal layers for power supplies202512,237,321Filler cell region with centrally uncut gate segments, semiconductor device including same and method of manufacturing same202512,224,285Integrated circuit and method of forming the same202512,199,037Standard and engineering change order (ECO) cell regions and semiconductor device including the same202512,169,679Transmission gate structure202412,125,840Non-transitory computer-readable medium, integrated circuit device and method202412,125,948Semiconductor device and light-emitting system202412,094,880Integrated circuits and manufacturing methods thereof202412,087,690Integrated circuit having a high cell density202412,044,567Detection device and manufacturing method thereof comprising an insulating layer disposed on a photoelectric element with a groove lacated in a second region of a substrate202411,862,620Power gating cell structure202411,853,679Method of designing an integrated circuit and integrated circuit202311,817,350Method for manufacturing standard cell regions and engineering change order (ECO) cell regions202311,764,155Cell structure with intermediate metal layers for power supplies202311,727,187Transmission gate manufacturing method202311,710,743Integrated circuit202311,675,961Engineering change order cell structure having always-on transistor202311,636,248Metal cut region location system202311,581,314Integrated circuits and manufacturing methods thereof202311,574,900Integrated circuit device and method202311,556,688Integrated circuit layout method and system202311,437,319Integrated circuit having a high cell density202211,430,918Semiconductor device and light-emitting system202211,315,874Cell structure with intermediate metal layers for power supplies202211,295,055Transmission gate structure and method202211,275,885Engineering change order cell structure having always-on transistor202211,182,529Semiconductor device including power-grid-adapted route-spacing and method for generating layout diagram of same202111,177,256Odd-fin height cell regions, semiconductor device having the same, and method of generating a layout diagram corresponding to the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (31)· patent assignee history
2021–2026Based in TW· patent location history
2022–2024Patents assigned to XIAMEN SANAN OPTOELECTRONICS CO LTD (2)· patent assignee history
2022–2024Based in CN· patent location history
2024Patents assigned to INNOCARE OPTOELECTRONICS CORP (1)· patent assignee history
2025Patents assigned to GLOBAL UNICHIP CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 31 | 2021–2026 |
| XIAMEN SANAN OPTOELECTRONICS CO LTD | 2 | 2022–2024 |
| GLOBAL UNICHIP CORP | 1 | 2025 |
| INNOCARE OPTOELECTRONICS CORP | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 32 | 2021–2026 |
| CN | 2 | 2022–2024 |