Inventor
Michael L. McSwiney
Inventor
Hillsboro, OR, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C23CCoating metallic material15%
H10DInorganic electric semiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10BElectronic memory devices4%
H10NElectric solid-state devices not otherwise provided for4%
C02FTreatment of water, waste water, sewage, or sludge2%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%
PatentTitleYear
10,658,487Semiconductor devices having ruthenium phosphorus thin films20208,633,463'Depositing titanium silicon nitride films for forming phase change memories'20148,501,523'Depositing titanium silicon nitride films for forming phase change memories'20138,227,335'Forming a copper diffusion barrier'20128,003,293'Pixelated photoresists'20117,704,858'Methods of forming nickel silicide layers with low carbon content'20107,615,337'Photoactive resist capping layer'20097,473,614'Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer'20097,470,450'Forming a silicon nitride film'20087,459,392'Noble metal barrier and seed layer for semiconductors'20087,452,728'Metal ion separation from aqueous solutions using photoswitchable ionophores'20087,316,949'Integrating n-type and p-type metal gate transistors'20087,279,423'Forming a copper diffusion barrier'20077,241,707'Layered films formed by controlled phase segregation'20077,235,344'Energy harvesting molecules and photoresist technology'20077,138,158'Forming a dielectric layer using a hydrocarbon-containing precursor'20067,125,582'Low-temperature silicon nitride deposition'20067,071,125'Precursors for film formation'20066,972,225'integrating n-type and P-type metal gate transistors'20056,953,719'Integrating n-type and p-type metal gate transistors'20056,858,483'Integrating n-type and p-type metal gate transistors'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2020Patents assigned to INTEL CORP (19)· patent assignee history
2005–2012Based in Hillsboro, OR, US· patent location history
2006–2020Based in Scappoose, OR, US· patent location history
2012–2013Patents assigned to MCSWINEY MICHAEL L (2)· patent assignee history
2012Patents assigned to DUBIN VALERY M (1)· patent assignee history
2013–2014Patents assigned to MICRON TECHNOLOGY INC (2)· patent assignee history
2013Patents assigned to CHANG KUO-WEI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INTEL CORP | 19 | 2005–2020 |
| MCSWINEY MICHAEL Lself | 2 | 2012–2013 |
| MICRON TECHNOLOGY INC | 2 | 2013–2014 |
| CHANG KUO-WEI | 1 | 2013 |
| DUBIN VALERY M | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hillsboro, OR, US | 13 | 2005–2012 |
| Scappoose, OR, US | 8 | 2006–2020 |