Inventor
Boris N. Feigelson
Inventor
Springfield, VA, US
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
C04BLime, magnesia11%
C30BSingle-crystal growth11%
H01LSemiconductor devices11%
B22FWorking metallic powder8%
H10DInorganic electric semiconductor devices8%
B02CCrushing, pulverising, or disintegrating in general6%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals6%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds6%
H01JElectric discharge tubes or discharge lamps6%
PatentTitleYear
11,075,049Thermionic tungsten/scandate cathodes and method of making the same202110,854,457Implanted dopant activation for wide bandgap semiconductor electronics202010,751,801Bulk monolithic nano-heterostructures and method of making the same202010,562,784Nanocrystalline alpha alumina and method for making the same202010,513,462Transparent nanocomposite ceramics built from core/shell nanoparticles201910,497,530Thermionic tungsten/scandate cathodes and methods of making the same201910,403,509Basal plane dislocation elimination in 4H--SiC by pulsed rapid thermal annealing201910,351,435Nanocrystalline alpha alumina and method for making the same20199,543,168'Defects annealing and impurities activation in semiconductors at thermodynamically non-stable conditions'20179,129,799'Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology'20158,999,060'Method of growing GaN whiskers from a gallium-containing solvent at low pressure and low temperature'20158,679,248'GaN whiskers and methods of growing them from solution'20148,518,808'Defects annealing and impurities activation in III-nitride compound'20138,449,672'Method of growing group III nitride crystals'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2020Patents assigned to FEIGELSON BORIS N (7)· patent assignee history
2013–2019Patents assigned to US NAVY (7)· patent assignee history
2013–2015Patents assigned to KUB FRANCIS J (3)· patent assignee history
2013–2021Based in Springfield, VA, US· patent location history
2014–2015Patents assigned to EDDY JR CHARLES R (2)· patent assignee history
2019–2021Patents assigned to US GOV SEC NAVY (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| US GOV SEC NAVY | 8 | 2019–2021 |
| FEIGELSON BORIS Nself | 7 | 2013–2020 |
| US NAVY | 7 | 2013–2019 |
| KUB FRANCIS J | 3 | 2013–2015 |
| EDDY JR CHARLES R | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Springfield, Virginia, US | 14 | 2013–2021 |