Inventor

Yasunori Tokuda

Inventor

Tokyo, JP

Overview

21→

Patents

1988–2011

Patent span

Electricity

Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures21%

H10DInorganic electric semiconductor devices21%

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light16%

H10HInorganic light-emitting semiconductor devices having potential barriers12%

G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein9%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

PatentTitleYear

8,035,130'Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region'2011 7,939,943'Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer'2011 7,795,738'Nitride semiconductor device'2010 7,678,597'Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact'2010 6,635,938'Semiconductor device and manufacturing method thereof'2003 6,624,034'Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction'2003 6,617,654'Semiconductor device with sidewall spacers and elevated source/drain region'2003 6,566,734'Semiconductor device'2003 6,518,635'Semiconductor device and manufacturing method thereof'2003 6,373,108'Semiconductor device having reduced sheet resistance of source/drain regions'2002 6,232,192'Method of manufacturing semiconductor device having sidewall portions removed'2001 6,228,728'Method of fabricating semiconductor device'2001 5,539,668'Optical switching apparatus'1996 5,306,925'Nonlinear optical element and method of using the same'1994 5,285,080'Method of selective light detection'1994 5,144,397'Light responsive semiconductor device'1992 5,097,306'Method of tristable selective light detection with pin diode'1992 4,843,032'Process for producing a DFB laser with a diffraction grating superlattice'1989 4,817,110'Semiconductor laser device'1989 4,788,689'Composite resonator-type semiconductor laser device'1988 4,786,951'Semiconductor optical element and a process for producing the same'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2011Patents assigned to MITSUBISHI ELECTRIC CORP (20)· patent assignee history

1988–1994Based in Amagasaki, JP· patent location history

1992Based in Itami, JP· patent location history

1994–2003Based in Hyogo, JP· patent location history

2001Patents assigned to MITUBISHI DENKI KABUSHIKI KAIS (1)· patent assignee history

2003–2011Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MITSUBISHI ELECTRIC CORP	20	1988–2011
MITUBISHI DENKI KABUSHIKI KAIS	1	2001

Locations

Location	Patents	Span
Tokyo, JP	7	2003–2011
Hyogo, JP	7	1994–2003
Amagasaki, JP	6	1988–1994
Itami, JP	1	1992