Inventor
Toshimi Hitora
Inventor
Kyoto, JP
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
C23CCoating metallic material10%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
C30BSingle-crystal growth6%
C01GCompounds containing metals not covered by subclasses c01d or c01f4%
H01CResistors2%
B05BSpraying apparatus1%
B05DProcesses for applying fluent materials to surfaces, in general1%
PatentTitleYear
11,107,926Oxide semiconductor film and method for producing same202111,088,242Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device202111,087,977P-type oxide semiconductor and method for manufacturing same202111,069,781Crystalline semiconductor film, plate-like body and semiconductor device202111,038,026Crystalline multilayer structure and semiconductor device202110,989,609Thermistor film and method of depositing the same202110,943,981Semiconductor device202110,944,015Semiconductor device202110,930,743Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device202110,804,362Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system202010,580,648Semiconductor device and method of manufacturing semiconductor device202010,535,728Crystalline multilayer oxide thin films structure in semiconductor device202010,460,934Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film201910,439,028Crystalline semiconductor film, plate-like body and semiconductor device201910,202,685Method of manufacturing oxide crystal thin film201910,204,978Crystalline multilayer oxide thin films structure in semiconductor device201910,128,349Semiconductor device201810,109,707Crystalline multilayer oxide thin films structure in semiconductor device201810,106,633Method and apparatus for producing polymer and method and apparatus for producing organic film201810,090,388Crystalline multilayer structure and semiconductor device201810,043,664Multilayer structure, method for manufacturing same, semiconductor device, and crystalline film20189,966,439Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same20189,828,694Method of forming metal film20179,711,590'Semiconductor device, or crystal'20179,590,050'Crystalline multilayer structure and semiconductor device'20179,379,190'Crystalline multilayer structure and semiconductor device'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2021Patents assigned to FLOSFIA INC (26)· patent assignee history
2016–2021Based in Kyoto, JP· patent location history
2017Based in Osaka, JP· patent location history
2019–2021Patents assigned to UNIV KYOTO (3)· patent assignee history
2019Patents assigned to NAT INST MATERIALS SCIENCE (1)· patent assignee history
2019Patents assigned to UNIV SAGA (1)· patent assignee history
2021Based in Kyoto-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FLOSFIA INC | 26 | 2016–2021 |
| UNIV KYOTO | 3 | 2019–2021 |
| NAT INST MATERIALS SCIENCE | 1 | 2019 |
| UNIV SAGA | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 23 | 2016–2021 |
| Kyoto-shi, JP | 2 | 2021 |
| Osaka, JP | 1 | 2017 |