LexDanaLexDanabeta
Inventor

Woon-Kyung Lee

Inventor
Seongnam-si, KR

Overview

56→
Patents
1998–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices36%
H10DInorganic electric semiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G11CStatic stores9%
H01LSemiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H05BElectric heating2%
PatentTitleYear
10,461,030Pad structures and wiring structures in a vertical type semiconductor device2019RE047169NAND flash memory device and method of making same20189,306,041'Vertical type semiconductor devices'20169,305,830'Methods of fabricating semiconductor devices'20169,299,716'Methods of manufacturing a semiconductor device'20169,209,244'Semiconductor device with vertical structures that penetrate conductive patterns and interlayer insulating patterns'20159,112,045'Nonvolatile memory device and fabricating method thereof'20159,087,861'Methods of manufacturing a semiconductor device'20158,933,517'Semiconductor device comprising a dummy well'20158,906,805'Methods of fabricating semiconductor devices'20148,836,020'Vertical nonvolatile memory devices having reference features'20148,654,585'NAND flash memory device and method of making same'20148,609,496'Method of fabricating semiconductor device comprising a dummy well'20138,470,704'Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion'20138,456,918'NAND flash memory device and method of operating same to reduce a difference between channel potentials therein'20138,404,578'Methods of forming nonvolatile memory devices having electromagnetically shielding source plates'20138,350,344'Semiconductor device and method of fabricating the same'20138,264,025'Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion'20128,243,518'NAND flash memory device and method of making same'20128,237,230'Semiconductor device comprising a dummy well and method of fabricating the same'20128,187,967'Method of manufacturing a non-volatile memory device'20128,119,460'Semiconductor device and method of forming the same'20128,116,111'Nonvolatile memory devices having electromagnetically shielding source plates'20128,053,848'Semiconductor device and method of forming the same'20118,035,149'Nonvolatile memory devices with oblique charge storage regions and methods of forming the same'20118,036,043'Nonvolatile semiconductor device and memory system including the same'20117,851,304'Nonvolatile memory device and fabrication method'20107,847,332'Nonvolatile memory devices with oblique charge storage regions and methods of forming the same'20107,687,860'Semiconductor device including impurity regions having different cross-sectional shapes'20107,683,422'Non-volatile memory devices with wraparound-shaped floating gate electrodes and methods of forming same'20107,670,904'Nonvolatile memory device and method for fabricating the same'20107,592,664'Nonvolatile memory structure and method of forming the same'20097,589,374'Semiconductor device and related fabrication method'20097,579,244'Method of fabricating a semiconductor device'20097,494,871'Semiconductor memory devices and methods for forming the same'20097,397,130'Semiconductor devices with contact holes self-aligned in two directions'20087,388,249'Semiconductor device having self-aligned gate pattern'20087,057,226'Semiconductor device and method of fabricating the same'20067,015,087'Gate-contact structure and method for forming the same'20067,008,848'Mask ROM fabrication method'20066,933,195'Method of fabricating a flash memory device'20056,855,978'Gate-contact structure and method for forming the same'20056,635,532'Method for fabricating NOR type flash memory device'20036,573,574'Cell array region of a NOR-type mask ROM device and fabricating method therefor'20036,555,865'Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the same'20036,531,360'Method of manufacturing a flash memory device'20036,448,112'Cell array region of a NOR-type mask ROM device and fabricating method therefor'20026,346,733'Nonvolatile memory device'20026,291,308'Mask ROM fabrication method'20016,207,490'Semiconductor device and method for fabricating the same'20016,150,700'Advanced nor-type mask ROM'20006,122,188'Non-volatile memory device having multi-bit cell structure and a method of programming same'20005,923,606'NOR-type mask ROM having dual sense current paths'19995,920,784'Method for manufacturing a buried transistor'19995,846,863'Method for manufacturing a semiconductor ROM device'19985,721,698'Read only memory device and manufacturing method'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2019Patents assigned to SAMSUNG ELECTRONICS CO LTD (54)· patent assignee history
1998–2000Based in Seoul, KR· patent location history
2002–2009Based in Yongin, KR· patent location history
2003–2006Based in Kyungki-do, KR· patent location history
2008–2015Based in Gyeonggi-do, KR· patent location history
2009–2019Based in Seongnam-si, KR· patent location history
2012–2016Patents assigned to LEE WOON-KYUNG (18)· patent assignee history
2012–2013Patents assigned to LEE SEUNG-JUN (3)· patent assignee history
2014–2016Patents assigned to HWANG SUNG-MIN (4)· patent assignee history
2015–2016Patents assigned to KIM HAN-SOO (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD541998–2019
LEE WOON-KYUNGself182012–2016
HWANG SUNG-MIN42014–2016
KIM HAN-SOO32015–2016
LEE SEUNG-JUN32012–2013
Locations
LocationPatentsSpan
Seongnam-si, KR262009–2019
Gyeonggi-do, KR92008–2015
Kyungki-do, KR72003–2006
Yongin, KR52002–2009
Seoul, KR51998–2000