Inventor

Thomas C. Holloway

Inventor

Dallas, TX, US

Overview

1978–2001

Patent span

Electricity

Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices21%

H10DInorganic electric semiconductor devices21%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%

G11CStatic stores4%

PatentTitleYear

6,222,251'Variable threshold voltage gate electrode for higher performance mosfets'2001 6,087,268'Method to reduce boron diffusion through gate oxide using sidewall spacers'2000 6,072,715'Memory circuit and method of construction'2000 6,040,249'Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy'2000 6,037,230'Method to reduce diode capacitance of short-channel MOSFETS'2000 5,989,962'Semiconductor device having dual gate and method of formation'1999 5,302,539'VLSI interconnect method and structure'1994 4,931,411'Integrated circuit process with TiN-gate transistor'1990 4,894,693'Single-polysilicon dram device and process'1990 4,845,047'Threshold adjustment method for an IGFET'1989 4,821,085'VLSI local interconnect structure'1989 4,814,854'Integrated circuit device and process with tin-gate transistor'1989 4,811,076'Device and process with doubled capacitors'1989 4,811,078'Integrated circuit device and process with tin capacitors'1989 4,804,636'Process for making integrated circuits having titanium nitride triple interconnect'1989 4,746,219'Local interconnect'1988 4,690,730'Oxide-capped titanium silicide formation'1987 4,676,866'Process to increase tin thickness'1987 4,657,628'Process for patterning local interconnects'1987 4,354,896'Formation of submicron substrate element'1982 4,112,575'Fabrication methods for the high capacity ram cell'1978

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1978–2001Patents assigned to TEXAS INSTRUMENTS INC (20)· patent assignee history

1978–1982Based in Garland, TX, US· patent location history

1987–1994Based in Dallas, TX, US· patent location history

1990Patents assigned to HAKEN ROGER A (1)· patent assignee history

1990Patents assigned to HOLLOWAY THOMAS C (1)· patent assignee history

1990Patents assigned to TIGELAAR HOWARD L (1)· patent assignee history

1999–2001Based in Murphy, TX, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TEXAS INSTRUMENTS INC	20	1978–2001
HAKEN ROGER A	1	1990
HOLLOWAY THOMAS Cself	1	1990
TIGELAAR HOWARD L	1	1990

Locations

Location	Patents	Span
Dallas, Texas, US	13	1987–1994
Murphy, Texas, US	6	1999–2001
Garland, Texas, US	2	1978–1982