Inventor
Karl M. Robinson
Inventor
Boise, ID, US
Overview
Patents· 114 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B24Bprimary
B24BMachines, devices, or processes for grinding or polishing23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
B24DTools for grinding, buffing or sharpening5%
H10BElectronic memory devices4%
H10DInorganic electric semiconductor devices4%
B08BCleaning in general4%
C11DDetergent compositions3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,661,304Microfluidic control surfaces using ordered nanotube fabrics202010,137,457Crushing machines201810,124,367Methods for arranging nanoscopic elements within networks, fabrics and films20189,574,290'Methods for arranging nanotube elements within nanotube fabrics and films'20179,422,651'Methods for arranging nanoscopic elements within networks, fabrics, and films'20168,905,338'Crushing machines'20148,469,298'Crushing machines'20137,825,450'Sacrificial self-aligned interconnect structures'20107,427,793'Sacrificial self-aligned interconnect structure'20087,276,446'Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies'20077,205,599'Devices having improved capacitance'20077,132,035'Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes'20067,126,205'Devices having improved capacitance and methods of their fabrication'20066,995,072'Method of making sacrificial self-aligned interconnection structure'20066,919,984'Metal trim mirror for optimized thin film resistor laser trimming'20056,893,325'Method and apparatus for increasing chemical-mechanical-polishing selectivity'20056,838,353'Devices having improved capacitance and methods of their fabrication'20056,818,501'Method of making a self-aligned recessed container cell capacitor'20046,805,615'Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies'20046,747,249'System for performing thermal reflow operations under high gravity conditions'20046,672,951'Fixed abrasive polishing pad'20046,660,610'Devices having improved capacitance and methods of their fabrication'20036,645,865'Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes'20036,613,675'Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes'20036,599,836'Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies'20036,573,478'Systems for performing thermal reflow operations under high gravity conditions'20036,558,234'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20036,552,408'Methods, apparatuses, and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes'20036,544,435'Composition and method of formation and use therefor in chemical-mechanical polishing'20036,540,593'Fixed abrasive polishing pad'20036,532,772'Formation of planar dielectric layers using liquid interfaces'20036,527,626'Fixed abrasive polishing pad'20036,521,536'Planarization process'20036,521,534'Treatment of exposed silicon and silicon dioxide surfaces'20036,520,841'Apparatus and methods for chemical mechanical polishing with an incrementally advanceable polishing sheet'20036,517,425'Fixed abrasive polishing pad'20036,476,435'Self-aligned recessed container cell capacitor'20026,458,015'Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers'20026,455,916'Integrated circuit devices containing isolated dielectric material'20026,444,537'Method of preparing a capacitor on integrated circuit device containing isolated dielectric material'20026,431,960'Fixed abrasive polishing pad'20026,425,815'Fixed abrasive polishing pad'20026,419,568'Fixed abrasive polishing pad'20026,414,275'Method and apparatus for performing thermal reflow operations under high gravity conditions'20026,409,577'Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers'20026,409,586'Fixed abrasive polishing pad'20026,409,581'Belt polishing pad method'20026,409,936'Composition and method of formation and use therefor in chemical-mechanical polishing'20026,402,884'Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies'20026,386,212'Method of cleaning mixed material surfaces'20026,386,951'Methods of polishing materials, methods of slowing a rate of material removal of a polishing process, and methods of forming trench isolation regions'20026,379,225'Planarization process with abrasive polishing slurry that is selective to a planarized surface'20026,380,086'High-speed planarizing apparatus for chemical-mechanical planarization of semiconductor wafers'20026,361,417'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20026,331,139'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20016,326,303'Copper electroless deposition on a titanium-containing surface'20016,325,702'Method and apparatus for increasing chemical-mechanical-polishing selectivity'20016,290,579'Fixed abrasive polishing pad'20016,288,367'Method and apparatus for performing thermal reflow operations under high gravity conditions'20016,277,015'Polishing pad and system'20016,273,800'Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates'20016,261,922'Methods of forming trench isolation regions'20016,258,660'Method of making a self-aligned recessed container cell capacitor'20016,254,460'Fixed abrasive polishing pad'20016,238,270'Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers'20016,224,466'Methods of polishing materials, methods of slowing a rate of material removal of a polishing process'20016,203,407'Method and apparatus for increasing-chemical-polishing selectivity'20016,191,037'Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes'20016,174,761'Method and apparatus for performing thermal reflow operations under high gravity conditions'20016,174,780'Method of preparing integrated circuit devices containing isolated dielectric material'20016,168,986'Method of making a sacrificial self-aligned interconnect structure'20016,143,123'Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers'20006,143,627'Method for electrochemical oxidation of silicon'20006,136,043'Polishing pad methods of manufacture and use'20006,126,989'Copper electroless deposition on a titanium-containing surface'20006,124,207'Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries'20006,103,638'Formation of planar dielectric layers using liquid interfaces'20006,103,627'Treatment of a surface having an exposed silicon/silica interface'20006,098,639'Wet cleans for composite surfaces'20006,096,998'Method and apparatus for performing thermal reflow operations under high gravity conditions'20006,096,650'Treatment of a surface having exposed silica'20006,093,953'Isolation regions and methods of forming isolation regions'20006,090,475'Polishing pad, methods of manufacturing and use'20006,066,544'Isolation regions and methods of forming isolation regions'20006,062,952'Planarization process with abrasive polishing slurry that is selective to a planarized surface'20006,060,395'Planarization method using a slurry including a dispersant'20006,054,173'Copper electroless deposition on a titanium-containing surface'20006,054,172'Copper electroless deposition on a titanium-containing surface'20006,046,111'Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates'20005,990,012'Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads'19995,981,396'Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers'19995,944,906'Wet cleans for composite surfaces'19995,942,131'Treatment of a surface having an expose silicon/silica interface'19995,938,801'Polishing pad and a method for making a polishing pad with covalently bonded particles'19995,919,082'Fixed abrasive polishing pad'19995,893,754'Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers'19995,882,248'Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers'19995,879,226'Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers'19995,879,222'Abrasive polishing pad with covalently bonded abrasive particles'19995,877,069'Method for electrochemical local oxidation of silicon'19995,868,896'Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers'19995,834,358'Isolation regions and methods of forming isolation regions'19985,830,806'Wafer backing member for mechanical and chemical-mechanical planarization of substrates'19985,827,781'Planarization slurry including a dispersant and method of using same'19985,823,855'Polishing pad and a method for making a polishing pad with covalently bonded particles'19985,792,709'High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers'19985,779,522'Directional spray pad scrubber'19985,763,932'Isolation regions and methods of forming isolation regions'19985,733,176'Polishing pad and method of use'19985,725,417'Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates'19985,658,190'Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers'19975,645,737'Wet clean for a surface having an exposed silicon/silica interface'19975,624,303'Polishing pad and a method for making a polishing pad with covalently bonded particles'19975,616,069'Directional spray pad scrubber'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2010Patents assigned to MICRON TECHNOLOGY INC (105)· patent assignee history
1997–2010Based in Boise, ID, US· patent location history
2003–2018Based in Beaverton, OR, US· patent location history
2013–2017Patents assigned to ROBINSON KARL (3)· patent assignee history
2013–2018Patents assigned to TEREX GB LTD (3)· patent assignee history
2013–2018Based in Ballygawley, IE· patent location history
2016–2020Patents assigned to NANTERO INC (4)· patent assignee history
2016–2017Patents assigned to BENGTSON THOMAS R (2)· patent assignee history
2020Based in Herent, BE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 105 | 1997–2010 |
| NANTERO INC | 4 | 2016–2020 |
| ROBINSON KARLself | 3 | 2013–2017 |
| TEREX GB LTD | 3 | 2013–2018 |
| BENGTSON THOMAS R | 2 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 105 | 1997–2010 |
| Beaverton, OR, US | 5 | 2003–2018 |
| Ballygawley, IE | 3 | 2013–2018 |
| Herent, BE | 1 | 2020 |