Inventor
TENG-CHUN TSAI
Inventor
TW
Overview
Patents· 49 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10DInorganic electric semiconductor devices18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
C09GPolishing compositions6%
B24BMachines, devices, or processes for grinding or polishing5%
C09KMaterials for miscellaneous applications, not provided for elsewhere4%
C23CCoating metallic material2%
B24DTools for grinding, buffing or sharpening1%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
PatentTitleYear
12,543,365Fin isolation structure for FinFET and method of forming the same202612,538,739Post CMP cleaning apparatus and post CMP cleaning methods202612,528,154Method for conditioning polishing pad202612,512,318Method for selectively forming hard mask202512,441,912Chemical mechanical polishing slurry composition and method of polishing metal layer202512,438,043Semiconductor structure with staggered selective growth202512,431,412Contact plugs for semiconductor device and method of forming same202512,362,281Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof202512,363,980Spacer structure for semiconductor device202512,349,435Vertical device having a protrusion source202512,317,527Integrated circuit with a Fin and gate structure and method making the same202512,269,141Fabrication of a polishing pad for chemical mechanical polishing202512,261,055Slurry compositions for chemical mechanical planarization202512,176,217Method for manufacturing a semiconductor using slurry202412,154,822Dummy fin structures and methods of forming same202412,112,974Integrated circuit isolation feature and method of forming the same202412,080,779Capping layer for gate electrodes202412,024,651Chemical mechanical polishing slurry composition and method of polishing metal layer202412,009,253Semiconductor structure with staggered selective growth202411,961,900Integrated circuit with a fin and gate structure and method making the same202411,942,373Fin isolation structure for FinFET and method of forming the same202411,923,251Methods of cutting metal gates and structures formed thereof202411,916,131Vertical device having a protrusion source202411,915,936Semiconductor structure and manufacturing method thereof202411,865,666CMP polishing head design for improving removal rate uniformity202411,776,910Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof202311,756,864Contact plugs for semiconductor device202311,756,825Semiconductor structure with oxidized ruthenium202311,697,183Fabrication of a polishing pad for chemical mechanical polishing202311,688,644Fin isolation structure for FinFET and method of forming the same202311,688,607Slurry202311,664,268Dummy fin structures and methods of forming same202311,557,483Semiconductor structure and manufacturing method thereof202311,545,400Methods of cutting metal gates and structures formed thereof202311,529,712CMP polishing head design for improving removal rate uniformity202211,525,072Materials and methods for chemical mechanical polishing of ruthenium-containing materials202211,508,583Selective high-k formation in gate-last process202211,495,471Slurry compositions for chemical mechanical planarization202211,444,028Contact structure and formation thereof202211,398,381Method for forming semiconductor structure202211,389,928Method for conditioning polishing pad202211,387,138Integrated circuit isolation feature and method of forming the same202211,312,882CMP slurry solution for hardened fluid material202211,267,987Chemical mechanical polishing slurry composition and method of polishing metal layer202211,264,485Spacer structure for semiconductor device202211,227,788Method of forming isolation layer202211,193,043System for chemical mechanical polishing of Ge-based materials and devices202111,164,956Capping layer for gate electrodes202111,152,267Methods of cutting metal gates and structures formed thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (49)· patent assignee history
2021–2026Based in TW· patent location history
2026Patents assigned to CHAO HUANG LIN (1)· patent assignee history
2026Patents assigned to CHEN CHIH HUNG (1)· patent assignee history
2026Patents assigned to LEE CHU AN (1)· patent assignee history
2026Patents assigned to LEE SHEN NAN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 49 | 2021–2026 |
| CHAO HUANG LIN | 1 | 2026 |
| CHEN CHIH HUNG | 1 | 2026 |
| LEE CHU AN | 1 | 2026 |
| LEE SHEN NAN | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 49 | 2021–2026 |