Inventor
Oliver Blank
Inventor
Villach, AT
Overview
Patents· 70 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H01LSemiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
H10BElectronic memory devices1%
B23KSoldering or unsoldering1%
B81BMicrostructural devices or systems, e.g. micromechanical devices1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
G01CMeasuring distances, levels or bearings1%
PatentTitleYear
11,114,384Oxide-peeling stopper202110,910,318Optically detectable reference feature for die separation202110,903,321Semiconductor device and method of manufacturing a semiconductor device using an alignment layer202110,879,363Needle cell trench MOSFET202010,872,957Semiconductor device with needle-shaped field plate structures202010,868,173Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof202010,868,172Vertical power devices with oxygen inserted Si-layers202010,811,531Transistor device with gate resistor202010,727,331Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof202010,636,883Semiconductor device including a gate trench and a source trench202010,580,888Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices202010,510,846Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region201910,453,931Semiconductor device having termination trench201910,453,929Methods of manufacturing a power MOSFET201910,388,782Scalable current sense transistor201910,374,078Semiconductor devices and a method for forming a semiconductor device201910,355,126Semiconductor devices and method for manufacturing semiconductor devices201910,347,491Forming recombination centers in a semiconductor device201910,249,721Semiconductor device including a gate trench and a source trench201910,199,456Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench201910,177,250Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode201910,164,025Semiconductor device having termination trench201810,121,859Method of manufacturing semiconductor devices with transistor cells and semiconductor device201810,050,113Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions20189,960,270Semiconductor devices and method for manufacturing semiconductor devices20189,941,365Method for forming a stress-reduced field-effect semiconductor device20189,917,160'Semiconductor device having a polycrystalline silicon IGFET'20189,905,685'Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions'20189,799,738'Semiconductor device with field electrode and contact structure'20179,799,729'Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures'20179,768,290'Semiconductor device with metal-filled groove in polysilicon gate electrode'20179,728,614'Semiconductor device comprising a field electrode'20179,722,036'Semiconductor device with field electrode structure'20179,680,004'Power MOSFET with seperate gate and field plate trenches'20179,627,520'MOS transistor having a cell array edge zone arranged partially below and having an interface with a trench in an edge region of the cell array'20179,620,636'Semiconductor device with field electrode structures in a cell area and termination structures in an edge area'20179,590,095'Semiconductor device with field electrode structures in a cell area and termination structures in an edge area'20179,543,386'Semiconductor device with field electrode structures, gate structures and auxiliary diode structures'20179,536,960'Semiconductor device comprising a field electrode'20179,496,339'Semiconductor device comprising trench structures'20169,478,639'Electrode-aligned selective epitaxy method for vertical power devices'20169,450,062'Semiconductor device having polysilicon plugs with silicide crystallites'20169,443,973'Semiconductor device with charge compensation region underneath gate trench'20169,443,972'Semiconductor device with field electrode'20169,425,788'Current sensors and methods of improving accuracy thereof'20169,406,763'Stress-reduced field-effect semiconductor device and method for forming therefor'20169,356,141'Semiconductor device having peripheral trench structures'20169,324,817'Method for forming a transistor device having a field electrode'20169,324,823'Semiconductor device having a tapered gate structure and method'20169,252,251'Semiconductor component with a space saving edge structure'20169,190,480'Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device'20159,111,766'Transistor device with a field electrode'20159,105,713'Semiconductor device with metal-filled groove in polysilicon gate electrode'20159,076,765'Semiconductor device comprising trench gate and buried source electrodes'20158,975,662'Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device'20158,907,408'Stress-reduced field-effect semiconductor device and method for forming therefor'20148,884,360'Semiconductor device with improved robustness'20148,871,593'Semiconductor device with buried gate electrode and gate contacts'20148,796,764'Semiconductor device comprising trench gate and buried source electrodes'20148,558,308'Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor'20138,487,370'Trench semiconductor device and method of manufacturing'20138,362,551'Semiconductor device'20138,188,567'Semiconductor device and method for manufacturing'20128,114,743'Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device'20128,088,660'Method for producing a plug in a semiconductor body'20128,044,459'Semiconductor device with trench field plate including first and second semiconductor materials'20117,879,686'Semiconductor device and method for manufacturing'20117,880,226'Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device'20117,833,862'Semiconductor device and method for forming same'20107,674,678'Method for producing a transistor component having a field plate'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2016Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (23)· patent assignee history
2010–2015Based in Freising, DE· patent location history
2011–2014Based in Nittendorf, DE· patent location history
2012–2016Patents assigned to BLANK OLIVER (12)· patent assignee history
2012–2016Patents assigned to SIEMIENIEC RALF (9)· patent assignee history
2012–2021Based in Villach, AT· patent location history
2013–2016Patents assigned to HIRLER FRANZ (4)· patent assignee history
2016–2021Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (42)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AUSTRIA AG | 42 | 2016–2021 |
| INFINEON TECHNOLOGIES AUSTRIA | 23 | 2010–2016 |
| BLANK OLIVERself | 12 | 2012–2016 |
| SIEMIENIEC RALF | 9 | 2012–2016 |
| HIRLER FRANZ | 4 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Villach, AT | 60 | 2012–2021 |
| Freising, DE | 6 | 2010–2015 |
| Nittendorf, DE | 4 | 2011–2014 |