Inventor

Tadashi Nishioka

Inventor
Itami, JP

Overview

35→
Patents
1984–2021
Patent span
Physics
Primary field (CPC G)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests25%
G01QScanning-probe techniques or apparatus13%
B82YSpecific uses or applications of nanostructures9%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
Y10TTechnical subjects covered by former us classification4%
C23CCoating metallic material3%
C23FNon-mechanical removal of metallic material from surface2%
PatentTitleYear
10,974,534Hinged laminated body, layout sheet for hinged laminated body, and manufacturing method for hinged laminated body20215,792,314'Method of removing photosensitive resin and photosensitive resin removing apparatus'19985,736,745'Contamination evaluating apparatus'19985,723,982'Apparatus for analyzing thin film property'19985,720,814'Photoresist coating apparatus'19985,710,066'Method of forming fine patterns'19985,702,849'Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same'19975,688,723'Method of forming fine patterns'19975,656,809'Atomic force microscope and measuring head thereof with linearly polarized reflected light'19975,652,428'Method of using scanning probe microscope allowing cleaning of probe tip in ambient atmosphere'19975,622,787'Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same'19975,595,941'Method of forming fine patterns'19975,530,253'Sample stage for scanning probe microscope head'19965,477,732'Adhesion measuring method'19955,469,733'Cantilever for atomic force microscope and method of manufacturing the cantilever'19955,465,145'Semiconductor wafer inspection apparatus'19955,267,066'Liquid crystal display device, method of correcting defective pixels, and defective-pixel correcting apparatus used therein'19935,193,385'Cantilever for use in atomic force microscope and manufacturing method therefor'19935,130,273'Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity'19925,107,114'Fine scanning mechanism for atomic force microscope'19925,043,290'Process for forming electrodes for semiconductor devices by focused ion beam technology'19914,990,489'Read only memory device including a superconductive electrode'19914,962,059'Process for forming electrodes for semiconductor devices using focused ion beam deposition'19904,952,421'Method for repairing a pattern'19904,948,749'Process for forming electrodes for semiconductor devices'19904,947,042'Tunnel unit and scanning head for scanning tunneling microscope'19904,945,235'Fine adjustment mechanism for a scanning tunneling microscope'19904,880,975'Fine adjustment mechanism for a scanning tunneling microscope'19894,853,341'Process for forming electrodes for semiconductor devices using focused ion beams'19894,843,238'Method for identifying a blistered film in layered films'19894,837,445'Coarse adjusting device of scanning tunneling microscope'19894,723,062'Aluminum circuit to be disconnected and method of cutting the same'19884,691,078'Aluminum circuit to be disconnected and method of cutting the same'19874,636,400'Method of treating silicon nitride film formed by plasma deposition'19874,431,967'Method of mounting a semiconductor element for analyzing failures thereon'1984

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1984–1998Patents assigned to MITSUBISHI ELECTRIC CORP (33)· patent assignee history
1984–1998Based in Itami, JP· patent location history
1990–1998Based in Hyogo, JP· patent location history
1993Patents assigned to SHARP KK (1)· patent assignee history
1993Based in Tenri, JP· patent location history
1995–1998Patents assigned to RYODEN SEMICONDUCTOR SYST ENG (13)· patent assignee history
1997Patents assigned to RYODEN SEMICONDUCTOR SYSTEMS E (1)· patent assignee history
2021Patents assigned to DAINIPPON PRINTING CO LTD (1)· patent assignee history
2021Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MITSUBISHI ELECTRIC CORP331984–1998
RYODEN SEMICONDUCTOR SYST ENG131995–1998
DAINIPPON PRINTING CO LTD12021
RYODEN SEMICONDUCTOR SYSTEMS E11997
SHARP KK11993
Locations
LocationPatentsSpan
Itami, JP201984–1998
Hyogo, JP131990–1998
Tokyo, JP12021
Tenri, JP11993