Inventor

Toru Kaga

Inventor

Urawa, JP

Overview

1986–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices31%

H10DInorganic electric semiconductor devices21%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices9%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%

G01NInvestigating or analysing materials by determining their chemical or physical properties2%

G11CStatic stores2%

H01JElectric discharge tubes or discharge lamps2%

PatentTitleYear

9,194,826'Electron beam apparatus and sample observation method using the same'2015 7,385,197'Electron beam apparatus and a device manufacturing method using the same apparatus'2008 6,894,334'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'2005 6,878,586'Semiconductor memory device'2005 RE038296'Semiconductor memory device with recessed array region'2003 6,548,847'SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AND A TRANSITION-METAL NITRIDE FILM BETWEEN THE ALUMINUM WIRING STRIP AND THE TRANSITION-METAL FILM'2003 6,342,412'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'2002 6,169,324'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'2001 6,127,255'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'2000 5,811,316'Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring'1998 5,780,882'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'1998 5,739,589'Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same'1998 5,700,705'Semiconductor integrated circuit device'1997 5,646,423'Semiconductor integrated circuit device'1997 5,619,055'Semiconductor integrated circuit device'1997 5,591,998'Semiconductor memory device'1997 5,583,358'Semiconductor memory device having stacked capacitors'1996 5,557,147'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'1996 5,523,965'Semiconductor memory device and method of manufacturing same'1996 5,483,083'Semiconductor integrated circuit device'1996 5,466,621'Method of manufacturing a semiconductor device having silicon islands'1995 5,374,576'Method of fabricating stacked capacitor cell memory devices'1994 5,349,218'Semiconductor integrated circuit device including memory cells having a structure effective in suppression of leak current'1994 5,346,834'Method for manufacturing a semiconductor device and a semiconductor memory device'1994 5,331,191'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'1994 5,202,275'Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same'1993 5,200,635'Semiconductor device having a low-resistivity planar wiring structure'1993 5,196,910'Semiconductor memory device with recessed array region'1993 5,194,749'Semiconductor integrated circuit device'1993 5,177,576'Dynamic random access memory having trench capacitors and vertical transistors'1993 5,140,389'Semiconductor memory device having stacked capacitor cells'1992 5,115,289'Semiconductor device and semiconductor memory device'1992 5,106,775'Process for manufacturing vertical dynamic random access memories'1992 5,012,310'Semiconductor memory having stacked capacitor'1991 4,967,247'Vertical dynamic random access memory'1990 4,918,502'Semiconductor memory having trench capacitor formed with sheath electrode'1990 4,882,289'Method of making a semiconductor memory device with recessed array region'1989 4,873,560'Dynamic random access memory having buried word lines'1989 4,873,203'Method for formation of insulation film on silicon buried in trench'1989 4,668,970'Semiconductor device'1987 4,656,607'Electrically erasable programmable RAM'1987 4,633,438'Stacked semiconductor memory'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2003Patents assigned to HITACHI LTD (38)· patent assignee history

1986Patents assigned to HITACHI MICROCUMPUTER ENG (1)· patent assignee history

1986–2005Based in Urawa, JP· patent location history

1987Based in Kokubunji, JP· patent location history

1990–1992Based in Saitama, JP· patent location history

1993–2005Patents assigned to HITACHI VLSI ENG (10)· patent assignee history

1996–2008Based in Hachioji, JP· patent location history

2008–2015Patents assigned to EBARA CORP (2)· patent assignee history

2015Patents assigned to HATAKEYAMA MASAHIRO (1)· patent assignee history

2015Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	38	1986–2003
HITACHI VLSI ENG	10	1993–2005
EBARA CORP	2	2008–2015
HATAKEYAMA MASAHIRO	1	2015
HITACHI MICROCUMPUTER ENG	1	1986

Locations

Location	Patents	Span
Urawa, JP	33	1986–2005
Hachioji, JP	3	1996–2008
Saitama, JP	2	1990–1992
Kokubunji, JP	2	1987
Tokyo, JP	1	2015