Inventor
Seung Jin Yoo
Inventor
Kyungki-do, KR
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers20%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
E02FDredging9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
B60WConjoint control of vehicle sub-units of different type or different function6%
B60YIndexing scheme relating to aspects cross-cutting vehicle technology6%
B60TVehicle brake control systems or parts thereof3%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%
C30BSingle-crystal growth3%
PatentTitleYear
10,239,535Engine control device for hybrid construction machinery20199,725,881'Charging system for energy storage device of hybrid construction machinery'20179,627,627'Phosphine oxide-based compound and organic light-emitting device including the same'20179,493,927'Method and apparatus for controlling swing body of construction equipment'2016D0556776'Portable multimedia player'20077,268,372'Vertical GaN light emitting diode and method for manufacturing the same'20077,232,191'Apparatus and method for controlling vehicle stability'20077,112,456'Vertical GaN light emitting diode and method for manufacturing the same'20067,091,055'White light emitting diode and method for manufacturing the same'20067,087,985'Nitride semiconductor light emitting device'20067,015,512'High power flip chip LED'20066,914,262'White light emitting diode and method for manufacturing the same'20056,902,989'Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate'20056,818,531'Method for manufacturing vertical GaN light emitting diodes'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2007Patents assigned to SAMSUNG ELECTRO MECH (8)· patent assignee history
2004–2007Based in Kyungki-do, KR· patent location history
2005–2006Based in Pyungtaek, KR· patent location history
2007Patents assigned to HYUNDAI MOTOR CO LTD (1)· patent assignee history
2007–2019Based in Seoul, KR· patent location history
2007Based in Incheon, KR· patent location history
2016–2019Patents assigned to DOOSAN INFRACORE CO LTD (3)· patent assignee history
2017Patents assigned to INDUSTRY-ACADEMIC COOP FOUND GYEONGSANG NAT UNIV (1)· patent assignee history
2017Patents assigned to SAMSUNG DISPLAY CO LTD (1)· patent assignee history
2017Based in Jinju, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRO MECH | 8 | 2004–2007 |
| DOOSAN INFRACORE CO LTD | 3 | 2016–2019 |
| HYUNDAI MOTOR CO LTD | 1 | 2007 |
| INDUSTRY-ACADEMIC COOP FOUND GYEONGSANG NAT UNIV | 1 | 2017 |
| SAMSUNG DISPLAY CO LTD | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyungki-do, KR | 6 | 2004–2007 |
| Seoul, KR | 4 | 2007–2019 |
| Pyungtaek, KR | 2 | 2005–2006 |
| Jinju, KR | 1 | 2017 |
| Incheon, KR | 1 | 2007 |