Inventor

Hideto Kanamori

Inventor

Okazaki, JP

Overview

2→

Patents

1988–1992

Patent span

General tagging of new technological developments

Primary field (CPC Y)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution20%

Y02PClimate change mitigation technologies in the production or processing of goods20%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%

PatentTitleYear

5,151,385'Method of manufacturing a metallic silicide transparent electrode'1992 4,788,582'Semiconductor device and method of manufacturing the same'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–1992Patents assigned to HITACHI LTD (2)· patent assignee history

1988–1992Based in Okazaki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	2	1988–1992

Locations

Location	Patents	Span
Okazaki, JP	2	1988–1992