Inventor
Gun Yong Sung
Inventor
Daejeon, KR
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G01Nprimary
G01NInvestigating or analysing materials by determining their chemical or physical properties19%
H10NElectric solid-state devices not otherwise provided for15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
B01LChemical or physical laboratory apparatus for general use5%
B82YSpecific uses or applications of nanostructures5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
B01DSeparation3%
C23CCoating metallic material3%
C30BSingle-crystal growth3%
PatentTitleYear
8,969,099'Microanalysis methods and systems using field effect transistor'20158,834,811'Device for storing reagent and method of discharging reagent thereof'20148,728,312'Method and device for filtering blood using magnetic force'20148,628,650'Method and apparatus for measuring isoelectric point using field effect transistor'20148,529,750'Apparatus and method for detecting biomolecules'20138,500,281'Apparatus for irradiating beam at user\'s eye gaze point and operation method thereof'20138,475,738'Photocatalytic apparatus and method for injecting microfluidic volumes'20138,426,900'Sensing device'20138,345,248'Optical cavity enhanced turbidimeter and turbidity measuring method'20138,292,608'Apparatus for fixing plastic sheet and method of fabricating nano pattern on plastic sheet using the same'20128,277,644'Filtering device'20128,273,567'Portable measurement system having biophotonic sensor'20128,275,008'Wavelength tunable semiconductor laser apparatus'20128,228,502'Measurement device equipped with device for deciding measurement start point'20128,222,055'Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device'20128,199,325'Apparatus for detecting biomaterials and method for detecting biomaterials by using the apparatus'20128,169,006'Bio-sensor chip for detecting target material'20128,164,123'Biosensor and method of driving the same'20128,119,430'Method of manufacturing semiconductor nanowire sensor device and semiconductor nanowire sensor device manufactured according to the method'20128,018,595'Apparatus for detecting bio materials and method for detecting bio materials by using the apparatus'20117,982,231'Silicon-based light emitting diode using side reflecting mirror'20117,791,095'Semiconductor light emitting diode'20107,772,587'Silicon-based light emitting diode for enhancing light extraction efficiency and method of fabricating the same'20107,671,377'Silicon based light emitting diode'20107,608,853'Semiconductor light emitting diode that uses silicon nano dot and method of manufacturing the same'20096,998,643'Silicon-based light emitting diode'20066,773,836'Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof'20046,626,995'Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof'20036,423,473'Fabrication method of high temperature superconducting step-edge Josephson junction'20026,004,907'Method of fabricating a superconducting junction using cubic YBa.sub.2 Cu.sub.3 O .sub.x thin film as a barrier layer'19995,851,843'Method of manufacturing a super conduction field effect transistor'19985,846,846'Method for making a superconducting field-effect device with grain boundary channel'19985,820,682'Laser deposition apparatus for depositing a large area oxide thin film on a substrate'19985,801,393'Superconductor-insulator-superconductor Josephson tunnel junction and method therefor'19985,770,470'High temperature superconducting electric field effect device and a method for fabricating the same'19985,750,474'Method for manufacturing a superconductor-insulator-superconductor Josephson tunnel junction'19985,677,264'Process for forming A-axis oriented superconducting junction'19975,663,081'Method for making a high-temperature superconducting field-effect transistor with thick superconducting channel layer'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2015Patents assigned to KOREA ELECTRONICS TELECOMM (38)· patent assignee history
1997–2015Based in Daejeon, KR· patent location history
1998Based in Daejon, KR· patent location history
2002–2004Based in Taejon, KR· patent location history
2012–2015Patents assigned to SUNG GUN YONG (17)· patent assignee history
2012–2015Patents assigned to AH CHIL SEONG (8)· patent assignee history
2012–2013Patents assigned to PARK SEON HEE (8)· patent assignee history
2012–2013Patents assigned to HUH CHUL (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 38 | 1997–2015 |
| SUNG GUN YONGself | 17 | 2012–2015 |
| AH CHIL SEONG | 8 | 2012–2015 |
| PARK SEON HEE | 8 | 2012–2013 |
| HUH CHUL | 7 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 33 | 1997–2015 |
| Taejon, KR | 3 | 2002–2004 |
| Daejon, KR | 2 | 1998 |