Inventor

Patrick W. DeHaven

Inventor

Poughkeepsie, NY, US

Overview

24→

Patents

1992–2015

Patent span

Electricity

Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%

Y10TTechnical subjects covered by former us classification20%

H10DInorganic electric semiconductor devices16%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%

C25DProcesses for the electrolytic or electrophoretic production of coatings9%

H05KPrinted circuits8%

H10KOrganic electric solid-state devices8%

G01BMeasuring length, thickness or similar linear dimensions3%

G01NInvestigating or analysing materials by determining their chemical or physical properties3%

H01LSemiconductor devices2%

PatentTitleYear

9,224,675'Automatic capacitance tuning for robust middle of the line contact and silicide applications'2015 8,574,953'Low temperature melt-processing of organic-inorganic hybrid'2013 8,123,997'Low temperature melt-processing of organic-inorganic hybrid'2012 7,951,708'Copper interconnect structure with amorphous tantalum iridium diffusion barrier'2011 7,456,045'Low temperature melt-processing of organic-inorganic hybrid'2008 7,407,875'Low resistance contact structure and fabrication thereof'2008 7,291,516'Low temperature melt-processing of organic-inorganic hybrid'2007 7,223,691'Method of forming low resistance and reliable via in inter-level dielectric interconnect'2007 7,105,360'Low temperature melt-processing of organic-inorganic hybrid'2006 6,916,729'Salicide formation method'2005 6,909,772'Method and apparatus for thin film thickness mapping'2005 6,792,075'Method and apparatus for thin film thickness mapping'2004 6,638,374'Device produced by a process of controlling grain growth in metal films'2003 6,572,982'Electromigration-resistant copper microstructure'2003 6,509,265'Process for manufacturing a contact barrier'2003 6,437,440'Thin film metal barrier for electrical interconnections'2002 6,361,627'Process of controlling grain growth in metal films'2002 6,333,120'Method for controlling the texture and microstructure of plated copper and plated structure'2001 6,291,885'Thin metal barrier for electrical interconnections'2001 6,180,521'Process for manufacturing a contact barrier'2001 6,126,761'Process of controlling grain growth in metal films'2000 6,123,825'Electromigration-resistant copper microstructure and process of making'2000 5,943,601'Process for fabricating a metallization structure'1999 5,171,642'Multilayered intermetallic connection for semiconductor devices'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2015Patents assigned to IBM (24)· patent assignee history

1992–2015Based in Poughkeepsie, NY, US· patent location history

2004Patents assigned to HYPERNEX INC (1)· patent assignee history

2011Based in Hopewell Junction, NY, US· patent location history

2012–2013Patents assigned to DEHAVEN PATRICK W (2)· patent assignee history

2012–2013Patents assigned to MEDEIROS DAVID R (2)· patent assignee history

2012–2013Patents assigned to MITZI DAVID B (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	24	1992–2015
DEHAVEN PATRICK Wself	2	2012–2013
MEDEIROS DAVID R	2	2012–2013
MITZI DAVID B	2	2012–2013
HYPERNEX INC	1	2004

Locations

Location	Patents	Span
Poughkeepsie, New York, US	23	1992–2015
Hopewell Junction, New York, US	1	2011