Inventor
Po-Hao Tseng
Inventor
Taichung, TW
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices23%
H10NElectric solid-state devices not otherwise provided for15%
H10BElectronic memory devices14%
G11CStatic stores9%
H10DInorganic electric semiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
B82YSpecific uses or applications of nanostructures5%
C25DProcesses for the electrolytic or electrophoretic production of coatings5%
G06FElectric digital data processing5%
H04LTransmission of digital information, e.g. telegraphic communication5%
PatentTitleYear
11,107,982RRAM structure202110,868,117Systems and methods for forming nanowires using anodic oxidation202010,763,306Resistive memory and method for fabricating the same and applications thereof202010,510,837Systems and methods for forming nanowires using anodic oxidation201910,490,744Contact hole structure method for fabricating the same and applications thereof201910,482,953Multi-state memory device and method for adjusting memory state characteristics of the same201910,476,002Method for thermally treating semiconductor structure before saving data201910,388,698Resistive memory with bird beak shaped structure method for fabricating the same and applications thereof201910,332,840Semiconductor device with physically unclonable function (PUF) and apparatus including the same201910,115,769Resistive random access memory device and method for manufacturing the same201810,103,895Method for physically unclonable function-identification generation and apparatus of the same20189,859,336'Semiconductor device including a memory cell structure'20189,853,215Resistance switching memory device and method of manufacturing the same20179,852,791Semiconductor memory device, chip ID generation method thereof and manufacturing method thereof20179,811,689'Chip ID generation using physical unclonable function'20179,528,194'Systems and methods for forming nanowires using anodic oxidation'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2016–2020Patents assigned to UNIV NAT TAIWAN (3)· patent assignee history
2016Patents assigned to TAIWAN SEMICONDUCTOR MFG COMPANY LTD & NAT TAIWAN UNIV (1)· patent assignee history
2016–2020Based in Taichung, TW· patent location history
2017–2020Patents assigned to MACRONIX INT CO LTD (12)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 12 | 2017–2020 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2016–2021 |
| UNIV NAT TAIWAN | 3 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG COMPANY LTD & NAT TAIWAN UNIV | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taichung, TW | 15 | 2016–2020 |