Inventor
Noriyuki Futagawa
Inventor
Kanagawa, JP
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light35%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
B82YSpecific uses or applications of nanostructures10%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
C30BSingle-crystal growth6%
H04NPictorial communication, e.g. television6%
G02BOptical elements, systems or apparatus5%
H10DInorganic electric semiconductor devices2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
11,081,862Light emitting element and method of manufacturing the same202111,031,752Surface-emitting laser and electronic apparatus202110,873,174Light-emitting element and method of manufacturing the same202010,826,275Surface emitting laser element202010,818,718Light receiving element, method of manufacturing light receiving element, imaging device, and electronic apparatus202010,700,497Optical semiconductor device202010,637,209Light emitting element202010,541,513Light emitting element and method of manufacturing the same202010,256,609Surface light-emitting laser201910,199,799Light emitting element201910,199,800Light emitting element201910,141,721Light-emitting element and manufacturing method thereof201810,109,984Optical semiconductor device20189,911,894'Nitride-based III-V group compound semiconductor'20189,893,492'Light emitting element and method of manufacturing the same'20189,882,352'Light emitting element'20189,595,810'Light emitting element having multiple surface areas of a semiconductor layer and method of producing same'20179,515,455'Method of manufacturing light emitting element'20169,407,067'Light emitting element and method of manufacturing the same'20169,252,566'Method of manufacturing light emitting element'20169,231,375'Semiconductor device'20169,034,738'Method for growing a nitride-based III-V Group compound semiconductor'20158,891,568'Laser diode device and method of manufacturing laser diode device'20148,859,401'Method for growing a nitride-based III-V group compound semiconductor'20148,731,016'Nitride semiconductor light emitting device'20148,242,513'Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device'20127,183,584'Quantum well structure and semiconductor device using it and production method of semiconductor element'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007Based in Tokyo, JP· patent location history
2012–2021Patents assigned to SONY CORP (26)· patent assignee history
2012–2015Patents assigned to FUTAGAWA NORIYUKI (3)· patent assignee history
2012–2015Patents assigned to HINO TOMONORI (3)· patent assignee history
2012–2015Patents assigned to OHMAE AKIRA (3)· patent assignee history
2012–2021Based in Kanagawa, JP· patent location history
2014–2016Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (3)· patent assignee history
2016Based in Kangawa, JP· patent location history
2021Based in Yokohama-shi, Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 26 | 2012–2021 |
| FUTAGAWA NORIYUKIself | 3 | 2012–2015 |
| HINO TOMONORI | 3 | 2012–2015 |
| OHMAE AKIRA | 3 | 2012–2015 |
| SUMITOMO ELECTRIC INDUSTRIES | 3 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 24 | 2012–2021 |
| Yokohama-shi, Kanagawa, JP | 1 | 2021 |
| Kangawa, JP | 1 | 2016 |
| Tokyo, JP | 1 | 2007 |