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Inventor

Shuang Zhan

Inventor
Beijing, CN

Overview

2→
Patents
2016–2017
Patent span
Physics
Primary field (CPC G)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G01Nprimary
G01NInvestigating or analysing materials by determining their chemical or physical properties25%
Y02ATechnologies for adaptation to climate change25%
B82YSpecific uses or applications of nanostructures13%
C30BSingle-crystal growth13%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
PatentTitleYear
9,562,884'Method for manufacturing NO2 gas sensor for detection at room temperature'20179,418,843'Method for manufacturing ordered nanowire array of NiO doped with Pt in situ'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2017Patents assigned to INST OF MICROELECTRONICS CAS (2)· patent assignee history
2016–2017Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INST OF MICROELECTRONICS CAS22016–2017
Locations
LocationPatentsSpan
Beijing, CN22016–2017