Inventor

Chia-Shiung Tsai

Inventor
Hsinchu, TW

Overview

435→
Patents
1996–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 435 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices21%
H10DInorganic electric semiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10BElectronic memory devices10%
H10NElectric solid-state devices not otherwise provided for5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
G11CStatic stores2%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,868,024Method of forming embedded nonvolatile memory202010,840,438Reversed stack MTJ202010,840,2873DIC interconnect apparatus and method202010,825,825Flash memory structure202010,818,857Organic photosensitive device with an electron-blocking and hole-transport layer202010,811,504Semiconductor structure for flash memory cells and method of making same202010,804,101Semiconductor structure having sets of III-V compound layers and method of forming202010,790,1893D integrated circuit and methods of forming the same202010,781,098Method of manufacturing semiconductor structure202010,777,649Silicon nano-tip thin film for flash memory cells202010,756,222Backside illuminated photo-sensitive device with gradated buffer layer202010,748,967Image sensors with organic photodiodes and methods for forming the same202010,727,097Mechanisms for cleaning substrate surface for hybrid bonding202010,683,204Semiconductor arrangement and formation thereof202010,665,456Semiconductor structure202010,665,449Integrate rinse module in hybrid bonding platform202010,665,600Memory devices and method of fabricating same202010,658,474Method for forming thin semiconductor-on-insulator (SOI) substrates202010,643,964Structures for bonding a group III-V device to a substrate by stacked conductive bumps202010,629,811Resistance variable memory structure and method of forming the same202010,614,948Method for forming inductor structure with magnetic material202010,553,785Magnetoresistive random access memory device and method of making same202010,553,474Method for forming a semiconductor-on-insulator (SOI) substrate202010,529,916Reversed stack MTJ202010,522,532Through via extending through a group III-V layer201910,516,026Split gate memory device and method of fabricating the same201910,516,107Memory cell having resistance variable film and method of making the same201910,510,723Buffer layer(s) on a stacked structure having a via201910,510,763Embedded nonvolatile memory and forming method thereof201910,509,312Approach for ultra thin-film transfer and handling201910,510,597Methods for hybrid wafer bonding integrated with CMOS processing201910,504,756Wafer processing method and apparatus201910,504,904Semiconductor arrangement with capacitor and method of fabricating the same201910,497,860Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method201910,497,560Uniformity control for Si dot size in flash memory201910,497,773Method to improve MIM device performance201910,483,386Semiconductor device, transistor having doped seed layer and method of manufacturing the same201910,453,889Dual facing BSI image sensors with wafer level stacking201910,453,932Semiconductor structure for flash memory cells and method of making same201910,388,865High yield RRAM cell with optimized film scheme201910,361,2343DIC interconnect apparatus and method201910,354,972Hybrid bonding systems and methods for semiconductor wafers201910,355,011Method for forming flash memory structure201910,325,956Deep trench isolation shrinkage method for enhanced device performance201910,325,910Semiconductor device containing HEMT and MISFET and method of forming the same201910,322,930Semiconductor arrangement and formation thereof201910,297,604Split gate memory devices and methods of manufacturing201910,290,502Apparatus for reducing stripe patterns201910,280,076Semiconductor structure and manufacturing method thereof201910,283,448Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same201910,269,711Semiconductor device and method for manufacturing the same201910,269,807Semiconductor arrangement having capacitor separated from active region201910,193,065High K scheme to improve retention performance of resistive random access memory (RRAM)201910,181,558Magnetoresistive random access memory structure and method of forming the same201910,170,699RRAM cell bottom electrode formation201910,164,184Resistance variable memory structure and method of forming the same201810,163,972Image sensing device with photon blocking layer and anti-reflective coating201810,157,994High electron mobility transistor and method of forming the same201810,158,069Memory cell having resistance variable film and method of making the same201810,157,820Methods for manufacturing a thin film resistor over interconnect pads201810,157,706Inductor structure with magnetic material201810,155,214Getter, MEMS device and method of forming the same201810,147,794Split gate memory device and method of fabricating the same201810,138,118Structure to reduce backside silicon damage201810,134,945Wafer to wafer bonding techniques for III-V wafers and CMOS wafers201810,128,113Semiconductor structure and manufacturing method thereof201810,119,909Biological sensing structures201810,109,756Backside illuminated photo-sensitive device with gradated buffer layer201810,103,122Hybrid bonding systems and methods for semiconductor wafers201810,090,1963D integrated circuit and methods of forming the same201810,079,296High electron mobility transistor with indium nitride layer201810,079,257Anti-reflective layer for backside illuminated CMOS image sensors201810,074,537Method of forming semiconductor structure having sets of III-V compound layers201810,049,890Semiconductor structure and method of manufacturing the same201810,012,899Graphene pellicle for extreme ultraviolet lithography201810,008,531Varied STI liners for isolation structures in image sensing devices201810,008,506Semiconductor arrangement with capacitor201810,008,546Image sensors with organic photodiodes and methods for forming the same201810,003,022RRAM cell structure with conductive etch-stop layer20189,991,440Magnetoresistive random access memory cell and fabricating the same20189,978,754Semiconductor arrangement with capacitor20189,978,759Memory devices and method of forming same20189,978,603Memory devices and method of fabricating same20189,960,285Contact structure20189,960,353Method of fabricating an organic photodiode with dual electron blocking layers20189,960,129Hybrid bonding mechanisms for semiconductor wafers20189,944,516High aspect ratio etch without upper widening20189,941,3203DIC interconnect apparatus and method20189,929,007'e-Flash Si dot nitrogen passivation for trap reduction'20189,917,069'Hybrid bonding system and cleaning method thereof'20189,911,734'Semiconductor device containing HEMT and MISFET and method of forming the same'20189,887,155'Multiple metal layer semiconductor device and low temperature stacking method of fabricating the same'20189,876,093High electron mobility transistor and method of forming the same20189,876,167High yield RRAM cell with optimized film scheme20189,876,184Organic photosensitive device with an electron-blocking and hole-transport layer20189,865,389'Inductor structure with magnetic material'20189,859,295'Method for forming flash memory structure'20189,853,091Side bottom contact RRAM structure20179,837,606Resistance variable memory structure and method of forming the same20179,837,605Memory cell having resistance variable film and method of making the same20179,837,291Wafer processing method and apparatus20179,837,421Semiconductor arrangement having capacitor separated from active region20179,825,117'MIM/RRAM structure with improved capacitance and reduced leakage current'20179,825,040'Semiconductor arrangement with capacitor and method of fabricating the same'20179,793,243'Buffer layer(s) on a stacked structure having a via'20179,786,628'Air trench in packages incorporating hybrid bonding'20179,771,256'Micro electro mechanical system (MEMS) device having via extending through plug'20179,768,220'Deep trench isolation structure for image sensors'20179,754,813'Bond chuck, methods of bonding, and tool including bond chuck'20179,748,198'Hybrid bonding systems and methods for semiconductor wafers'20179,748,373'MISFET device'20179,748,255'Split gate memory devices and methods of manufacturing'20179,741,681'Debonding schemes'20179,738,516'Structure to reduce backside silicon damage'20179,728,597'Metal-insulator-metal structure and method for forming the same'20179,728,453'Methods for hybrid wafer bonding integrated with CMOS processing'20179,728,719'Leakage resistant RRAM/MIM structure'20179,722,011'Film scheme for MIM device'20179,711,555'Dual facing BSI image sensors with wafer level stacking'20179,704,820'Semiconductor manufacturing method and associated semiconductor manufacturing system'20179,685,518'Method of forming semiconductor structure of control gate, and semiconductor device'20179,679,980'Common source oxide formation by in-situ steam oxidation for embedded flash'20179,679,979'Semiconductor structure for flash memory cells and method of making same'20179,673,205'Embedded nonvolatile memory and forming method thereof'20179,660,063'Semiconductor structure having sets of III-V compound layers and method of forming the same'20179,653,507'Deep trench isolation shrinkage method for enhanced device performance'20179,647,207'Resistive random access memory (RRAM) structure'20179,637,375'MEMS device having a getter structure and method of forming the same'20179,634,096'Semiconductor device with trench isolation'20179,634,105'Silicon nano-tip thin film for flash memory cells'20179,627,467'Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion'20179,627,243'Method and apparatus of holding a device'20179,620,372'HK embodied flash memory and methods of forming the same'20179,611,141'Self-removal anti-stiction coating for bonding process'20179,614,145'Reversed stack MTJ'20179,608,195'Magnetic tunnel junction device'20179,595,589'Transistor with performance boost by epitaxial layer'20179,595,661'Magnetoresistive random access memory structure and method of forming the same'20179,595,521'Capacitive device'20179,577,077'Well controlled conductive dot size in flash memory'20179,577,191'RRAM cell bottom electrode formation'20179,570,536'Method for forming an inductor structure with magnetic material'20179,564,448'Flash memory structure'20179,559,177'Memory devices and method of fabricating same'20179,558,988'Method for filling the trenches of shallow trench isolation (STI) regions'20179,553,096'Semiconductor arrangement with capacitor'20179,553,154'Memory devices and method of fabricating same'20179,548,376'Method of manufacturing a semiconductor device including a barrier structure'20179,543,375'MIM/RRAM structure with improved capacitance and reduced leakage current'20179,543,362'Protective layer(s) in organic image sensors'20179,533,876'MEMS structures and methods for forming the same'20179,530,685'Isolation trench through backside of substrate'20169,527,188'Grinding wheel for wafer edge trimming'20169,525,130'Phase change memory and method of fabricating same'20169,508,586'Debonding schemes'20169,508,659'Method and apparatus to protect a wafer edge'20169,508,722'Semiconductor arrangment with capacitor'20169,502,514'Memory devices and method of forming same'20169,502,493'Multi-step method of forming a metal film'20169,502,396'Air trench in packages incorporating hybrid bonding'20169,490,158'Bond chuck, methods of bonding, and tool including bond chuck'20169,484,537'Organic photo diode with dual electron blocking layers'20169,484,351'Split gate memory device and method of fabricating the same'20169,478,632'Method of manufacturing a semiconductor device'20169,472,504'Semiconductor having a high aspect ratio via'20169,466,663'Semiconductor arrangement having capacitor separated from active region'20169,446,467'Integrate rinse module in hybrid bonding platform'20169,450,183'Memory structure having top electrode with protrusion'20169,450,057'Split gate cells for embedded flash memory'20169,443,796'Air trench in packages incorporating hybrid bonding'20169,431,609'Oxide film scheme for RRAM structure'20169,425,343'Mechanisms for forming image sensor device'20169,425,240'Image sensors with organic photodiodes and methods for forming the same'20169,425,061'Buffer cap layer to improve MIM structure performance'20169,418,901'Semiconductor device containing HEMT and MISFET and method of forming the same'20169,418,999'MIM capacitors with improved reliability'20169,419,218'Resistance variable memory structure and method of forming the same'20169,385,136'Silicon dot formation by self-assembly method and selective silicon growth for flash memory'20169,377,401'Biological sensing structures'20169,373,689'High electron mobility transistor and method of forming the same'20169,368,610'High electron mobility transistor with indium nitride layer'20169,362,271'Capacitive device'20169,355,882'Transfer module for bowed wafers'20169,356,231'MRAM device and fabrication method thereof'20169,349,768'CMOS image sensor with epitaxial passivation layer'20169,337,225'Semiconductor device and manufacturing method thereof'20169,331,032'Hybrid bonding and apparatus for performing the same'20169,306,158'MRAM device and fabrication method thereof'20169,299,927'Memory cell having resistance variable film and method of making the same'20169,293,445'Wafer level packaging bond'20169,293,392'3DIC interconnect apparatus and method'20169,287,279'Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storage'20169,281,203'Silicon dot formation by direct self-assembly method for flash memory'20169,281,331'High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensor'20169,263,569'MISFET device and method of forming the same'20169,257,568'Structure for flash memory cells'20169,257,498'Process to improve performance for metal-insulator-metal (MIM) capacitors'20169,257,642'Protective sidewall techniques for RRAM'20169,257,497'Metal-insulator-metal (MIM) capacitor techniques'20169,257,636'Perpendicular magnetic random-access memory (MRAM) formation by direct self-assembly method'20169,257,399'3D integrated circuit and methods of forming the same'20169,252,296'Semiconductor device with compressive layers'20169,245,991'Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing'20169,245,974'Performance boost by silicon epitaxy'20169,219,109'Inductor structure with magnetic material'20159,219,240'Protective layer(s) in organic image sensors'20159,214,539'Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric'20159,202,875'High electron mobility transistor with indium nitride layer'20159,196,825'Reversed stack MTJ'20159,190,441'Image sensor trench isolation with conformal doping'20159,178,136'Magnetoresistive random access memory cell and fabricating the same'20159,178,144'RRAM cell with bottom electrode'20159,169,117'MEMS device and method of forming the same'20159,172,033'MRAM device and fabrication method thereof'20159,166,153'System and process to remove film from semiconductor devices'20159,159,842'Embedded nonvolatile memory'20159,159,723'Method for manufacturing semiconductor device and semiconductor device'20159,153,435'Reducing wafer distortion through a high CTE layer'20159,153,717'Backside illuminated photo-sensitive device with gradated buffer layer'20159,142,407'Semiconductor structure having sets of III-V compound layers and method of forming the same'20159,142,761'Method for fabricating a magnetic tunnel junction device'20159,136,393'HK embodied flash memory and methods of forming the same'20159,130,026'Crystalline layer for passivation of III-N surface'20159,130,156'Process to remove film from semiconductor devices'20159,123,671'Silicon wafer strength enhancement'20159,105,759'Capacitive device and method of making the same'20159,099,324'Semiconductor device with trench isolation'20159,099,476'Semiconductor having a high aspect ratio via'20159,099,389'Method and apparatus for reducing stripe patterns'20159,093,511'Transistor having high breakdown voltage and method of making the same'20159,087,981'Methods of forming a magnetic tunnel junction device'20159,082,651'Memory devices and method of forming same'20159,076,854'Semiconductor device'20159,076,681'Memory devices and method of fabricating same'20159,064,821'Silicon dot formation by self-assembly method and selective silicon growth for flash memory'20159,059,057'Image sensor having compressive layers'20159,054,121'MEMS structures and methods for forming the same'20159,048,128'Inductor structure with magnetic material'20159,048,283'Hybrid bonding systems and methods for semiconductor wafers'20159,048,316'Flash memory structure and method of forming the same'20159,040,385'Mechanisms for cleaning substrate surface for hybrid bonding'20159,040,951'Resistance variable memory structure and method of forming the same'20159,006,080'Varied STI liners for isolation structures in image sensing devices'20158,999,777'Method of conducting a direction-specific trimming process for contact patterning'20158,999,833'Method and apparatus for controlling gate dimensions of memory devices'20158,987,033'Method for forming CMOS image sensors'20158,975,641'Transistor having an ohmic contact by gradient layer and method of making the same'20158,969,882'Transistor having an ohmic contact by screen layer and method of making the same'20158,969,171'Method of making deep trench, and devices formed by the method'20158,945,344'Systems and methods of separating bonded wafers'20158,932,897'Phase change memory cell'20158,932,900'Phase change memory and method of fabricating same'20158,928,120'Wafer edge protection structure'20158,921,959'MRAM device and fabrication method thereof'20148,912,573'Semiconductor device containing HEMT and MISFET and method of forming the same'20148,905,293'Self-removal anti-stiction coating for bonding process'20148,901,609'Transistor having doped substrate and method of making the same'20148,889,507'MIM capacitors with improved reliability'20148,883,524'Methods and apparatus for CMOS sensors'20148,884,268'Diffusion barrier layer for group III nitride on silicon substrate'20148,872,149'RRAM structure and process using composite spacer'20148,853,811'Image sensor trench isolation with conformal doping'20148,853,768'Method of fabricating MONOS semiconductor device'20148,851,133'Method and apparatus of holding a device'20148,846,129'Biological sensing structures and methods of forming the same'20148,836,055'MEMS structures and methods for forming the same'20148,822,237'Hole first hardmask definition'20148,816,358'Plasmonic nanostructures for organic image sensors'20148,809,123'Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers'20148,802,457'Backside surface treatment of semiconductor chips'20148,802,538'Methods for hybrid wafer bonding'20148,791,571'System and method for preventing etch arcing during semiconductor processing'20148,791,504'Substrate breakdown voltage improvement for group III-nitride on a silicon substrate'20148,790,946'Methods of bonding caps for MEMS devices'20148,772,831'III-nitride growth method on silicon substrate'20148,759,225'Method to form a CMOS image sensor'20148,735,207'Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array'20148,728,845'Method and apparatus for selectively removing anti-stiction coating'20148,723,185'Reducing wafer distortion through a high CTE layer'20148,710,560'Embedded bonding pad for image sensors'20148,685,783'Phase change memory cell'20148,647,962'Wafer level packaging bond'20148,629,531'Structure and method to reduce wafer warp for gallium nitride on silicon wafer'20148,628,990'Image device and methods of forming the same'20148,610,227'Formation of embedded micro-lens'20138,598,687'Semiconductor having a high aspect ratio via'20138,569,849'Hole first hardmask definition'20138,558,297'MRAM cell structure'20138,501,572'Spacer structure for transistor device and method of manufacturing same'2013RE044376'Silicon substrate with reduced surface roughness'20138,476,146'Reducing wafer distortion through a low CTE layer'20138,445,953'Structure for flash memory cells'20138,445,380'Semiconductor having a high aspect ratio via'20138,377,733'Antireflective layer for backside illuminated image sensor and method of manufacturing same'20138,354,295'Backside illuminated sensor processing'20138,344,343'Composite film for phase change memory devices'20138,313,959'Hole first hardmask definition'20128,288,750'Phase change memory device with air gap'20128,278,122'Method for forming MTJ cells'20128,273,625'Structure for flash memory cells'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (229)· patent assignee history
1996–2020Based in Hsinchu, TW· patent location history
1996–2014Based in Hsin Chu, TW· patent location history
2007Based in Awaiting, TW· patent location history
2011–2015Patents assigned to TSAI CHIA-SHIUNG (54)· patent assignee history
2012–2015Patents assigned to LIU SHIH-CHANG (16)· patent assignee history
2012–2015Patents assigned to CHAO LAN-LIN (13)· patent assignee history
2014Based in Kaohsiung, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (201)· patent assignee history
2015Based in Hsinchuq, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG2291996–2016
TAIWAN SEMICONDUCTOR MFG CO LTD2012015–2020
TSAI CHIA-SHIUNGself542011–2015
LIU SHIH-CHANG162012–2015
CHAO LAN-LIN132012–2015
Locations
LocationPatentsSpan
Hsinchu, TW4251996–2020
Hsin Chu, TW41996–2014
Hsinchuq, TW12015
Kaohsiung, TW12014
Awaiting, TW12007