Inventor
Yi-Chiau Huang
Inventor
Fremont, CA, US
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices18%
C23CCoating metallic material7%
C30BSingle-crystal growth3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
B05CApparatus for applying fluent materials to surfaces, in general2%
C07DHeterocyclic compounds2%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%
C08LCompositions of macromolecular compounds2%
PatentTitleYear
10,894,873Ultraviolet absorbing compound and applications thereof202110,128,110Method to enhance growth rate for selective epitaxial growth201810,062,598Thermal processing susceptor20189,966,438Method of doped germanium formation20189,929,055'Method to grow thin epitaxial films at low temperature'20189,881,790'Method to enhance growth rate for selective epitaxial growth'20189,721,792'Method of forming strain-relaxed buffer layers'20179,530,638'Method to grow thin epitaxial films at low temperature'20169,299,560'Methods for depositing group III-V layers on substrates'20169,177,815'Methods for chemical mechanical planarization of patterned wafers'20159,171,718'Method of epitaxial germanium tin alloy surface preparation'20159,082,684'Method of epitaxial doped germanium tin alloy formation'20159,029,264'Methods for depositing a tin-containing layer on a substrate'20158,999,821'Fin formation by epitaxial deposition'20158,822,312'Method of forming high growth rate, low resistivity germanium film on silicon substrate'20148,759,201'Method of forming high growth rate, low resistivity germanium film on silicon substrate'20148,669,590'Methods and apparatus for forming silicon germanium-carbon semiconductor structures'20148,658,540'Methods for low temperature conditioning of process chambers'20148,652,951'Selective epitaxial germanium growth on silicon-trench fill and in situ doping'20148,647,439'Method of epitaxial germanium tin alloy surface preparation'20148,501,600'Methods for depositing germanium-containing layers'20138,501,594'Methods for forming silicon germanium layers'20138,043,907'Atomic layer deposition processes for non-volatile memory devices'20117,921,803'Chamber components with increased pyrometry visibility'20117,897,208'Low temperature ALD SiO2 '20117,749,574'Low temperature ALD SiO2'20107,659,158'Atomic layer deposition processes for non-volatile memory devices'20107,572,052'Method for monitoring and calibrating temperature in semiconductor processing chambers'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2018Patents assigned to APPLIED MATERIALS INC (27)· patent assignee history
2009–2018Based in Fremont, CA, US· patent location history
2013–2015Patents assigned to HUANG YI-CHIAU (8)· patent assignee history
2013–2014Patents assigned to CARLSON DAVID K (2)· patent assignee history
2013Patents assigned to SANCHEZ ERROL (2)· patent assignee history
2014–2015Patents assigned to SANCHEZ ERROL ANTONIO C (6)· patent assignee history
2021Based in Taipei, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 27 | 2009–2018 |
| HUANG YI-CHIAUself | 8 | 2013–2015 |
| SANCHEZ ERROL ANTONIO C | 6 | 2014–2015 |
| CARLSON DAVID K | 2 | 2013–2014 |
| SANCHEZ ERROL | 2 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fremont, California, US | 27 | 2009–2018 |
| Taipei, TW | 1 | 2021 |