Inventor
Nobuyasu Muto
Inventor
Tokyo, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1050%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H01LSemiconductor devices17%
PatentTitleYear
9,397,072'Method of manufacturing semiconductor device'20169,177,936'Method of manufacturing semiconductor device'20158,796,074'Method of manufacturing semiconductor device'20148,530,278'Semiconductor device and a manufacturing method of the same'20138,283,210'Method of manufacturing semiconductor device'20127,981,788'Semiconductor device and a manufacturing method of the same'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2016Patents assigned to RENESAS ELECTRONICS CORP (6)· patent assignee history
2011–2016Based in Tokyo, JP· patent location history
2012–2014Patents assigned to MUTO NOBUYASU (3)· patent assignee history
2013Patents assigned to KAWANABE NAOKI (1)· patent assignee history
2013Patents assigned to ONO HIROSHI (1)· patent assignee history
2013Patents assigned to WADA TAMAKI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 6 | 2011–2016 |
| MUTO NOBUYASUself | 3 | 2012–2014 |
| KAWANABE NAOKI | 1 | 2013 |
| ONO HIROSHI | 1 | 2013 |
| WADA TAMAKI | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 6 | 2011–2016 |