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Inventor

Kei Kaneko

Inventor
Kanagawa, JP

Overview

42→
Patents
2009–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 42 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H01LSemiconductor devices19%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H10DInorganic electric semiconductor devices3%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
H05BElectric heating2%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
11,114,821Semiconductor laser wafer and semiconductor laser202110,630,059Surface emitting quantum cascade laser202010,490,979Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser201910,490,977Surface-emitting quantum cascade laser201910,424,899Surface emitting quantum cascade laser20199,472,720'Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer'20169,373,752'Semiconductor light-emitting element'20169,373,753'Method for manufacturing semiconductor light emitting device'20169,362,115'Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer'20169,324,918'Semiconductor light emitting device and semiconductor light emitting apparatus'20169,269,868'Semiconductor light emitting element and method for manufacturing semiconductor light emitting element'20169,184,242'Nitride semiconductor wafer, nitride semiconductor element, and method for manufacturing nitride semiconductor wafer'20159,130,127'Semiconductor light emitting device'20159,130,106'Method for manufacturing semiconductor light emitting apparatus by mounting semiconductor light emitting device having stacked dielectric films having different refractive indexes on mounting member'20159,093,614'Semiconductor light emitting element and semiconductor light emitting device'20159,070,837'Semiconductor light-emitting device and method for manufacturing same'20159,059,374'Semiconductor light emitting device'20159,012,888'Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer'20158,974,852'Method of manufacturing light-emitting device with fluorescent layer'20158,963,177'Semiconductor light emitting element and semiconductor light emitting device'20158,937,325'Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer'20158,921,886'Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device'20148,890,193'Semiconductor light emitting apparatus having stacked reflective dielectric films'20148,791,498'Semiconductor light emitting device and method for manufacturing same'20148,729,583'Semiconductor light-emitting device'20148,729,594'Semiconductor light-emitting element'20148,692,228'Semiconductor light emitting device and wafer'20148,569,738'Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer'20138,513,687'Semiconductor light emitting device and semiconductor light emitting apparatus'20138,470,627'Method for manufacturing semiconductor light emitting device'20138,421,085'Semiconductor light-emitting device'20138,377,724'Method for producing semiconductor light-emitting element'20138,338,844'Semiconductor light emitting apparatus having stacked reflective dielectric films'20128,329,489'Method for manufacturing semiconductor light emitting device'20128,324,611'Semiconductor light emitting device and wafer'20128,039,830'Semiconductor light emitting device and wafer'20118,017,970'Semiconductor light-emitting element'20117,932,666'Light-emitting device with fluorescent layer'20117,902,565'Semiconductor light emitting device and method for manufacturing same'20117,663,307'Light-emitting device'20107,615,794'Semiconductor light emitting device and semiconductor light emitting apparatus'20097,525,127'Semiconductor light emitting device'2009

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2009–2021Patents assigned to TOSHIBA KK (42)· patent assignee history
2009–2016Based in Kanagawa, JP· patent location history
2009–2015Based in Odawara, JP· patent location history
2012–2015Patents assigned to KANEKO KEI (18)· patent assignee history
2012–2015Patents assigned to KATSUNO HIROSHI (17)· patent assignee history
2012–2015Patents assigned to OHBA YASUO (17)· patent assignee history
2012–2015Patents assigned to KUSHIBE MITSUHIRO (16)· patent assignee history
2016–2021Based in Yokohama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK422009–2021
KANEKO KEIself182012–2015
KATSUNO HIROSHI172012–2015
OHBA YASUO172012–2015
KUSHIBE MITSUHIRO162012–2015
Locations
LocationPatentsSpan
Kanagawa, JP322009–2016
Yokohama, JP62016–2021
Odawara, JP42009–2015