Inventor
Hiroaki Anmo
Inventor
Kanagawa, JP
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices64%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests36%
PatentTitleYear
5,856,228'Manufacturing method for making bipolar device having double polysilicon structure'19995,665,615'Method of making BiCMOS semiconductor device'19975,643,806'Manufacturing method for making bipolar device'19975,641,692'Method for producing a Bi-MOS device'19975,541,124'Method for making bipolar transistor having double polysilicon structure'19965,324,672'Manufacturing method for bipolar transistor'19945,163,178'Semiconductor device having enhanced impurity concentration profile'19925,101,258'Semiconductor integrated circuit device of master slice approach'19925,055,905'Semiconductor device'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–1999Patents assigned to SONY CORP (9)· patent assignee history
1991–1999Based in Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 9 | 1991–1999 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 9 | 1991–1999 |