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Inventor

Makoto Iida

Inventor
Gunma, JP

Overview

61→
Patents
1976–2021
Patent span
Chemistry
Primary field (CPC C)

Patents· 61 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth29%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
Y10TTechnical subjects covered by former us classification10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B29CShaping or joining of plastics5%
B29LIndexing scheme associated with subclass b29c, relating to particular articles3%
H05KPrinted circuits3%
G11BInformation storage based on relative movement between record carrier and transducer3%
A62CFire-fighting2%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients2%
PatentTitleYear
11,048,900Image reading device and method20218,931,913'Trunk of motorcycle'20158,308,864'Single-crystal manufacturing method'20127,790,267'Workpiece boring/cutting operation aiding plate material and molding making use of the same'20107,749,865'Method for producing semiconductor wafers and a system for determining a cut position in a semiconductor ingot'20107,582,159'Method for producing a single crystal'20097,571,641'Flow measure instrument, passage of flow measure and production method'20097,437,926'Air flow rate measuring device'20087,384,477'Method for producing a single crystal and a single crystal'20087,326,658'Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer'20087,323,048'Method for producing a single crystal and a single crystal'20087,316,385'Throttle body'20087,258,744'Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal'20077,069,885'Cylinder head'20066,986,502'Throttle body'20066,902,618'Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method'20056,843,847'Silicon single crystal wafer and production method thereof and soi wafer'20056,841,450'Annealed wafer manufacturing method and annealed wafer'20056,780,067'Combined integral molded product using pre-molded member'20046,665,123'Projector'20036,599,360'Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon wafer'20036,548,035'Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same'20036,544,332'Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer'20036,544,490'Silicon wafer and production method thereof and evaluation method for silicon wafer'20036,445,872'Recording and reproducing apparatus for recording digital broadcast compression-coded data of video signals of a multiplicity of channels'20026,401,643'Sewn cover assembly and product foamed therewith'20026,364,947'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'20026,348,180'Silicon single crystal wafer having few crystal defects'20026,334,896'Single-crystal silicon wafer having few crystal defects and method for manufacturing the same'20026,299,982'Silicon single crystal wafer and method for producing silicon single crystal wafer'20016,261,361'Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it'20016,197,109'Method for producing low defect silicon single crystal doped with nitrogen'20016,191,009'Method for producing silicon single crystal wafer and silicon single crystal wafer'20016,191,675'High voltage transformer and ignition transformer using the same'20016,159,438'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'20006,156,427'Electroconductive resin composition for molding and electromagnetic wave interference shield structure molded from the composition'20006,120,598'Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method'20006,120,599'Silicon single crystal wafer having few crystal defects, and method for producing the same'20006,120,749'Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same'20006,077,343'Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it'20006,066,306'Silicon single crystal wafer having few crystal defects, and method RFO producing the same'20006,053,975'Crystal holding apparatus'20006,048,395'Method for producing a silicon single crystal having few crystal defects'20006,027,562'Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method'20005,968,264'Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same'19995,964,941'Crystal pulling method and apparatus'19995,948,164'Seed crystal holder'19995,911,821'Method of holding a monocrystal, and method of growing the same'19995,882,397'Crystal pulling method'19995,871,578'Methods for holding and pulling single crystal'19995,491,301'Shielding method and circuit board employing the same'19965,461,599'Optical disk system'19955,414,682'Focus draw-in system for optical disc device'19955,179,601'Method of manufacturing circuit structure by insert molding of electric and/or optical transmission medium'19935,071,223'Circuit structure formed by insert molding of electric and/or optical transmission medium'19914,734,448'Propylene polymer composition'19884,409,341'Composition for fire retardant urethane foam'19834,227,577'Fire-extinguishing system'19804,183,409'Automatic fire-extinguishing system'19804,163,215'Safety lock system for controlling access to an area in response to predetermined data inputs'19793,935,699'Doffing apparatus for spinning frame'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1979–1980Patents assigned to SECURITY PATROLS CO (3)· patent assignee history
1979–2021Based in Tokyo, JP· patent location history
1983–2009Patents assigned to HITACHI LTD (11)· patent assignee history
1983–2009Based in Kawasaki, JP· patent location history
1995–2002Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (3)· patent assignee history
1999–2012Patents assigned to SHINETSU HANDOTAI KK (35)· patent assignee history
1999–2009Based in Gunma, JP· patent location history
1999–2005Based in Annaka, JP· patent location history
2006–2008Patents assigned to HITACHI CAR ENG CO LTD (2)· patent assignee history
2008–2010Based in Fukushima, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU HANDOTAI KK351999–2012
HITACHI LTD111983–2009
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD31995–2002
SECURITY PATROLS CO31979–1980
HITACHI CAR ENG CO LTD22006–2008
Locations
LocationPatentsSpan
Gunma, JP261999–2009
Kawasaki, JP101983–2009
Annaka, JP61999–2005
Tokyo, JP41979–2021
Fukushima, JP32008–2010