Inventor

Satoshi Shimamoto

Inventor
Toyama, JP

Overview

49→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 49 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H01LSemiconductor devices26%
C23CCoating metallic material25%
H01JElectric discharge tubes or discharge lamps5%
H10DInorganic electric semiconductor devices5%
H10BElectronic memory devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
B08BCleaning in general1%
B29BPreparation or pretreatment of the material to be shaped1%
B29CShaping or joining of plastics1%
PatentTitleYear
11,094,532Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium202110,910,214Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium202110,720,325Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium202010,604,842Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium202010,607,833Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium202010,490,400Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,290,492Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,199,219Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201910,163,910Method of manufacturing semiconductor device201810,134,586Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201810,115,583Method of manufacturing semiconductor device201810,090,322Method of manufacturing semiconductor device201810,066,298Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium201810,032,629Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium20189,991,179Method of manufacturing semiconductor device20189,978,587Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium20189,929,005'Method of manufacturing semiconductor device'20189,899,211'Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium'20189,890,458'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20189,865,458'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20189,837,261Method of manufacturing semiconductor device and substrate processing method20179,831,082Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium20179,793,107'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,773,661'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,741,556'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,732,426'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,698,007'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,685,455'Method of manufacturing semiconductor device having 3D structure'20179,673,043'Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and recording medium'20179,640,387'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,613,798'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,524,867'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20169,478,413'Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium'20169,472,391'Semiconductor device manufacturing method'20169,460,916'Method of manufacturing semiconductor device and substrate processing apparatus'20169,460,911'Method of manufacturing semiconductor device and substrate processing method'20169,431,240'Method of manufacturing semiconductor device'20169,355,866'Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium'20169,349,586'Method of manufacturing semiconductor device, substrate processing apparatus, substrate processing system and non-transitory computer-readable recording medium'20169,218,959'Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium'20159,054,046'Method of manufacturing semiconductor device and method of processing substrate'20158,987,146'Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium'20158,785,333'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20147,022,563'Semiconductor integrated circuit device and a method of manufacturing the same'20066,762,444'Semiconductor integrated circuit device and a method of manufacturing the same'20046,635,937'Semiconductor integrated circuit device'20035,981,301'Regeneration method and apparatus of wafer and substrate'19995,500,170'Heating and extruding method and device for bulk preform'19965,458,838'Heating and extruding method for bulk preform'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–1999Patents assigned to KOBE STEEL LTD (3)· patent assignee history
1995–1999Based in Kobe, JP· patent location history
2003–2006Based in Ome, JP· patent location history
2004–2006Patents assigned to RENESAS TECH CORP (2)· patent assignee history
2014–2021Patents assigned to HITACHI INT ELECTRIC INC (41)· patent assignee history
2014–2021Based in Toyama, JP· patent location history
2016Patents assigned to HITACHI KOKUSAI ELECETRIC INC (1)· patent assignee history
2019–2021Patents assigned to KOKUSAI ELECTRIC CORP (7)· patent assignee history
2021Based in Toyama-shi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI INT ELECTRIC INC412014–2021
KOKUSAI ELECTRIC CORP72019–2021
KOBE STEEL LTD31995–1999
RENESAS TECH CORP22004–2006
HITACHI KOKUSAI ELECETRIC INC12016
Locations
LocationPatentsSpan
Toyama, JP422014–2021
Ome, JP32003–2006
Kobe, JP31995–1999
Toyama-shi, JP12021