Inventor
Takayoshi Higashino
Inventor
Neyagawa, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
B82YSpecific uses or applications of nanostructures13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems6%
H03KPulse technique6%
PatentTitleYear
6,873,828'Compound semiconductor switching device for high frequency switching'20056,867,115'Compound semiconductor device'20056,580,107'Compound semiconductor device with depletion layer stop region'20035,614,814'Negative voltage genarating circuit'19975,557,141'Method of doping, semiconductor device, and method of fabricating semiconductor device'19965,350,709'Method of doping a group III-V compound semiconductor'19945,324,969'High-breakdown voltage field-effect transistor'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2005Patents assigned to SANYO ELECTRIC CO (7)· patent assignee history
1994–2005Based in Neyagawa, JP· patent location history
1994–1996Based in Moriguchi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANYO ELECTRIC CO | 7 | 1994–2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Neyagawa, JP | 5 | 1994–2005 |
| Moriguchi, JP | 2 | 1994–1996 |