Inventor
Feng-Cheng Yang
Inventor
Hsinchu County, TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices40%
H10DInorganic electric semiconductor devices40%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
11,133,229Forming transistor by selectively growing gate spacer202111,107,735Methods of forming epitaxial structures in fin-like field effect transistors202111,107,734Semiconductor device and manufacturing method thereof202111,088,245Integrated circuit device with source/drain barrier202111,063,152Semiconductor device and method202111,062,957FinFET device with wrapped-around epitaxial structure and manufacturing method thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (6)· patent assignee history
2021Based in Hsinchu County, TW· patent location history
2021Based in Zhudong Township, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 6 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu County, TW | 4 | 2021 |
| Zhudong Township, TW | 2 | 2021 |