Inventor
HSIN-FU HUANG
Inventor
TW
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices20%
H01LSemiconductor devices17%
H10NElectric solid-state devices not otherwise provided for14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G11CStatic stores9%
H01FMagnets9%
H10DInorganic electric semiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H01CResistors3%
PatentTitleYear
12,389,807Semiconductor device and method for fabricating the same202512,279,536Semiconductor device and method for fabricating the same202512,237,395High electron mobility transistor and method for forming the same202512,211,888Method for forming a thin film resistor with improved thermal stability202511,968,906Semiconductor device and method for fabricating the same202411,877,433Storage node contact structure of a memory device202411,424,408ReRAM structure and method of fabricating the same202211,239,243Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the same202211,165,019ReRAM structure and method of fabricating the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to UNITED MICROELECTRONICS CORP (9)· patent assignee history
2021–2025Based in TW· patent location history
2022–2024Patents assigned to FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 9 | 2021–2025 |
| FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD | 2 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 9 | 2021–2025 |