Inventor
SHIN-HWAN KANG
Inventor
KR
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices16%
PatentTitleYear
12,507,412Vertical memory devices and methods of manufacturing the same2025RE050547Integrated circuit device including vertical memory device and method of manufacturing the same2025RE050225Integrated circuit device including vertical memory device and method of manufacturing the same202412,063,781Vertical memory device having first contact plugs connected to plurality of staircase gate electrodes, respectively and second contact plugs extending through the staircase gate structure in the pad region202412,048,156Vertical memory devices and methods of manufacturing the same202411,696,442Vertical memory devices and methods of manufacturing the same202311,631,692Semiconductor memory device202311,335,697Vertical memory devices having contact plugs vertically extending through plurality of gate electrodes and contacting lower circuit pattern2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to SAMSUNG ELECTRONICS CO LTD (8)· patent assignee history
2022–2025Based in KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 8 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| KR | 8 | 2022–2025 |