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Inventor

Timothy A. Quick

Inventor
Boise, ID, US

Overview

62→
Patents
2006–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 62 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
C23CCoating metallic material16%
H10NElectric solid-state devices not otherwise provided for11%
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices7%
H10BElectronic memory devices5%
B82YSpecific uses or applications of nanostructures4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%
PatentTitleYear
10,964,532Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features202110,930,548Methods of forming an apparatus for making semiconductor dieves202110,651,375Memory cells, semiconductor devices including the memory cells, and methods of operation202010,283,705Memory cells, semiconductor devices including the memory cells, and methods of operation201910,153,200Methods of forming a nanostructured polymer material including block copolymer materials20189,935,264Memory cells and methods of fabrication20189,929,006'Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures'20189,865,456'Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures'20189,768,021'Methods of forming semiconductor device structures including metal oxide structures'20179,627,442'Horizontally oriented and vertically stacked memory cells'20179,349,949'Horizontally oriented and vertically stacked memory cells'20169,315,609'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20169,287,502'Resistance variable memory cell structures and methods'20169,276,059'Semiconductor device structures including metal oxide structures'20169,269,900'Methods of depositing phase change materials and methods of forming memory'20169,234,273'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20169,130,164'Resistive random access memory devices, and related semiconductor device structures'20159,029,856'Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures'20159,024,283'Horizontally oriented and vertically stacked memory cells'20159,006,075'Memory cells, semiconductor devices including such cells, and methods of fabrication'20158,785,239'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'20148,765,519'Methods of forming phase change materials and methods of forming phase change memory circuitry'20148,741,688'Methods of forming a metal chalcogenide material'20148,716,060'Confined resistance variable memory cell structures and methods'20148,697,486'Methods of forming phase change materials and methods of forming phase change memory circuitry'20148,679,914'Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material'20148,669,645'Semiconductor structures including polymer material permeated with metal oxide'20148,633,112'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20148,541,765'Resistance variable memory cell structures and methods'20138,481,361'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'20138,455,296'Semiconductor processing'20138,426,313'Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference'20138,394,725'Systems and methods for forming metal oxide layers'20138,367,460'Horizontally oriented and vertically stacked memory cells'20138,357,784'Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20138,323,736'Methods of forming metal-containing structures, and methods of forming germanium-containing structures'20128,298,938'Phase change memory cell structures and methods'20128,252,119'Microelectronic substrate cleaning systems with polyelectrolyte and associated methods'20128,198,129'Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry'20128,188,464'Atomic layer deposition systems and methods including metal beta-diketiminate compounds'20128,163,341'Methods of forming metal-containing structures, and methods of forming germanium-containing structures'20128,124,445'Confined resistance variable memory cell structures and methods'20128,114,219'Systems and methods for forming metal oxide layers'20128,097,175'Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure'20128,097,537'Phase change memory cell structures and methods'20128,017,184'β-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20118,003,521'Semiconductor processing'20117,858,815'Systems and methods for forming tantalum oxide layers and tantalum precursor compounds'20107,858,523'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20107,709,399'Atomic layer deposition systems and methods including metal β-diketiminate compounds'20107,678,708'Systems and methods for forming metal oxide layers'20107,666,801'Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands'20107,572,731'Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same'20097,482,284'Deposition methods for forming silicon oxide layers'20097,439,338'Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same'20087,439,195'Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands'20087,416,994'Atomic layer deposition systems and methods including metal beta-diketiminate compounds'20087,368,402'Systems and methods for forming tantalum oxide layers and tantalum precursor compounds'20087,332,442'Systems and methods for forming metal oxide layers'20087,115,528'Systems and method for forming silicon oxide layers'20067,087,481'Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands'20067,030,042'Systems and methods for forming tantalum oxide layers and tantalum precursor compounds'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2021Patents assigned to MICRON TECHNOLOGY INC (61)· patent assignee history
2006–2021Based in Boise, ID, US· patent location history
2012–2016Patents assigned to QUICK TIMOTHY A (22)· patent assignee history
2012–2015Patents assigned to MARSH EUGENE P (13)· patent assignee history
2012–2014Patents assigned to MILLWARD DAN B (4)· patent assignee history
2014–2016Patents assigned to UHLENBROCK STEFAN (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC612006–2021
QUICK TIMOTHY Aself222012–2016
MARSH EUGENE P132012–2015
MILLWARD DAN B42012–2014
UHLENBROCK STEFAN42014–2016
Locations
LocationPatentsSpan
Boise, ID, US622006–2021