Inventor
Hyun-Seung Yoo
Inventor
Gyeonggi-do, KR
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
G11CStatic stores25%
H10DInorganic electric semiconductor devices18%
H01LSemiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
9,508,444'3D non-volatile memory device and method for operating and fabricating the same'20169,466,376'Semiconductor memory device and operating method thereof'20169,384,841'Semiconductor device, semiconductor system having the same and operating method thereof'20169,373,402'Semiconductor memory device including a dummy memory cell and method of programming the same'20169,368,219'Nonvolatile memory device and operating method thereof'20169,362,299'Method of fabricating a nonvolatile memory device with a vertical semiconductor pattern between vertical source lines'20169,293,208'Semiconductor memory apparatus and method for reading data from the same'20169,286,983'Memory string and semiconductor device including the same'20169,286,988'Nonvolatile memory device and operating method thereof'20169,111,797'3-D nonvolatile memory device and method of manufacturing the same'20159,099,527'Non-volatile memory device and method of manufacturing the same'20159,053,977'Nonvolatile memory device with vertical semiconductor pattern between vertical source lines'20159,019,767'Nonvolatile memory device and operating method thereof'20158,941,172'Non-volatile memory device and method of manufacturing the same'20158,912,053'Non-volatile memory device and method for fabricating the same'20148,730,727'3D non-volatile memory device and method for operating and fabricating the same'20148,711,630'Programming method of non-volatile memory device'20148,675,404'Reading method of non-volatile memory device'20148,637,913'Nonvolatile memory device and method for fabricating the same'20148,482,055'Non-volatile memory device and method for fabricating the same'20137,955,960'Nonvolatile memory device and method of fabricating the same'20117,616,496'Charge trap type non-volatile memory device and program method thereof'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2014Patents assigned to HYNIX SEMICONDUCTOR INC (6)· patent assignee history
2009–2015Based in Icheon-si, KR· patent location history
2013–2015Patents assigned to YOO HYUN-SEUNG (8)· patent assignee history
2013–2015Patents assigned to CHOI EUN-SEOK (5)· patent assignee history
2013–2016Based in Gyeonggi-do, KR· patent location history
2014–2016Patents assigned to SK HYNIX INC (16)· patent assignee history
2014–2015Patents assigned to ARITOME SEIICHI (3)· patent assignee history
2016Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SK HYNIX INC | 16 | 2014–2016 |
| YOO HYUN-SEUNGself | 8 | 2013–2015 |
| HYNIX SEMICONDUCTOR INC | 6 | 2009–2014 |
| CHOI EUN-SEOK | 5 | 2013–2015 |
| ARITOME SEIICHI | 3 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 13 | 2013–2016 |
| Icheon-si, KR | 5 | 2009–2015 |
| Yongin-si, KR | 4 | 2016 |