Inventor

Johann Bartha

Inventor

Aidlingen, DE

Overview

18→

Patents

1989–2001

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%

G01QScanning-probe techniques or apparatus14%

Y10TTechnical subjects covered by former us classification11%

C23CCoating metallic material8%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices8%

H01JElectric discharge tubes or discharge lamps8%

B82YSpecific uses or applications of nanostructures5%

B26FPerforating3%

B41JTypewriters3%

PatentTitleYear

6,218,264'Method of producing a calibration standard for 2-D and 3-D profilometry in the sub-nanometer range'2001 6,061,074'Ion generator for ionographic print heads'2000 5,960,255'Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it'1999 5,791,959'Method of fabricating a field emission device'1998 5,717,278'Field emission device and method for fabricating it'1998 5,707,537'Bulk removal, transport and storage fixture for small batch-fabricated devices'1998 5,665,905'Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it'1997 5,658,472'Method for producing deep vertical structures in silicon substrates'1997 5,641,610'Method for producing a multi-step structure in a substrate'1997 5,635,337'Method for producing a multi-step structure in a substrate'1997 5,534,359'Calibration standard for 2-D and 3-D profilometry in the sub-nanometer range and method of producing it'1996 5,304,278'Apparatus for plasma or reactive ion etching and method of etching substrates having a low thermal conductivity'1994 5,296,091'Method of etching substrates having a low thermal conductivity'1994 5,162,133'Process for fabricating silicon carbide films with a predetermined stress'1992 5,116,462'Method of producing micromechanical sensors for the AFM/STM profilometry'1992 4,969,415'PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides'1990 4,918,033'PECVD (plasma enhanced chemical vapor deposition) method for depositing of tungsten or layers containing tungsten by in situ formation of tungsten fluorides'1990 4,871,418'Process for fabricating arbitrarily shaped through holes in a component'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2001Patents assigned to IBM (18)· patent assignee history

1989–1994Based in Sindelfingen, DE· patent location history

1996–2001Based in Aidlingen, DE· patent location history

1997Based in Aidlingen-Dachtel, DE· patent location history

1998–2000Based in Metelen, DE· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	18	1989–2001

Locations

Location	Patents	Span
Aidlingen, DE	7	1996–2001
Sindelfingen, DE	7	1989–1994
Metelen, DE	2	1998–2000
Aidlingen-Dachtel, DE	2	1997