Inventor
Weng-Liang Fang
Inventor
Hsinchu, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1043%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%
B25BTools or bench devices not otherwise provided for, for fastening, connecting, disengaging, or holding7%
B25JManipulators7%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices7%
H10BElectronic memory devices7%
PatentTitleYear
7,141,495'Methods and forming structures, structures and apparatuses for forming structures'20066,682,659'Method for forming corrosion inhibited conductor layer'20046,543,988'Apparatus for clamping and transporting a semiconductor wafer'20036,124,212'High density plasma (HDP) etch method for suppressing micro-loading effects when etching polysilicon layers'20005,783,482'Method to prevent oxide peeling induced by sog etchback on the wafer edge'19985,770,523'Method for removal of photoresist residue after dry metal etch'19985,747,856'Vertical channel masked ROM memory cell with epitaxy'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2006Patents assigned to TAIWAN SEMICONDUCTOR MFG (7)· patent assignee history
1998–2006Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 7 | 1998–2006 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 7 | 1998–2006 |