Inventor
Duo Mao
Inventor
Boise, ID, US
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material20%
G11CStatic stores20%
H01LSemiconductor devices20%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices20%
PatentTitleYear
10,749,041Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man202010,483,407Methods of forming si2019Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2019–2020Patents assigned to MICRON TECHNOLOGY INC (2)· patent assignee history
2019–2020Based in Boise, ID, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 2 | 2019–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 2 | 2019–2020 |