Inventor
Yoshimasa Horii
Inventor
Kawasaki, JP
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10BElectronic memory devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G11CStatic stores7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
8,652,854'Manufacturing method of a semiconductor device'20148,497,539'Semiconductor device and its manufacturing method'20138,344,434'Semiconductor device having ferroelectric capacitor'20138,222,683'Semiconductor device and its manufacturing method'20128,153,448'Manufacturing method of a semiconductor device'20127,960,228'Methods of making a ferroelectric memory device having improved interfacial characteristics'20117,897,413'Methods of making a ferroelectric memory device having improved interfacial characteristics'20117,547,933'Semiconductor device and manufacturing method of a semiconductor device'20097,241,656'Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device'20077,239,026'Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip'20077,176,132'Manufacturing method of semiconductor device'20077,075,135'Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film'20067,029,984'Method for fabricating semiconductor device'20066,964,873'Semiconductor device having a ferroelectric capacitor and a fabrication process thereof'20056,887,716'Process for producing high quality PZT films for ferroelectric memory integrated circuits'20056,812,510'Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory'20046,674,633'Process for producing a strontium ruthenium oxide protective layer on a top electrode'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2007Patents assigned to FUJITSU LTD (9)· patent assignee history
2004–2014Based in Kawasaki, JP· patent location history
2004Based in Kanagawa, JP· patent location history
2005Based in Iwate, JP· patent location history
2011–2014Patents assigned to FUJITSU SEMICONDUCTOR LTD (7)· patent assignee history
2012–2014Patents assigned to HORII YOSHIMASA (5)· patent assignee history
2012–2014Patents assigned to WANG WENSHENG (3)· patent assignee history
2012–2014Patents assigned to DOTE AKI (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJITSU LTD | 9 | 2004–2007 |
| FUJITSU SEMICONDUCTOR LTD | 7 | 2011–2014 |
| HORII YOSHIMASAself | 5 | 2012–2014 |
| WANG WENSHENG | 3 | 2012–2014 |
| DOTE AKI | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 15 | 2004–2014 |
| Iwate, JP | 1 | 2005 |
| Kanagawa, JP | 1 | 2004 |