Inventor
Yoichiro Tarui
Inventor
Tokyo, JP
Overview
Patents· 42 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
H10HInorganic light-emitting semiconductor devices having potential barriers2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
B82YSpecific uses or applications of nanostructures1%
C23CCoating metallic material1%
G01KMeasuring temperature1%
PatentTitleYear
11,125,803Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needle202111,094,790Silicon carbide semiconductor device202111,056,562Silicon carbide semiconductor device202110,665,713Silicon carbide semiconductor device202010,128,340Power semiconductor device20189,985,124Silicon carbide semiconductor device20189,935,170Silicon carbide semiconductor device and method for manufacturing same20189,842,906'Semiconductor device'20179,748,393'Silicon carbide semiconductor device with a trench'20179,627,571'Semiconductor device'20179,455,197'Method for manufacturing silicon carbide semiconductor device'20169,362,391'Silicon carbide semiconductor device and method of manufacturing the same'20169,324,806'Silicon carbide semiconductor device'20169,276,068'Manufacturing method of silicon carbide semiconductor device'20169,184,307'Silicon carbide semiconductor device'20159,184,306'Silicon carbide semiconductor device'20159,159,585'Method of manufacturing semiconductor device'20159,041,007'Semiconductor device'20158,987,105'SiC semiconductor device and method of manufacturing the same'20158,987,817'Semiconductor device having a gate insulating film with a thicker portion covering a surface of an epitaxial protrusion and manufacturing method thereof'20158,932,944'Silicon carbide semiconductor device manufacturing method'20158,809,969'Semiconductor device'20148,685,848'Manufacturing method of silicon carbide semiconductor device'20148,680,538'Silicon carbide semiconductor device'20148,587,072'Silicon carbide semiconductor device'20138,525,189'Silicon carbide semiconductor device'20138,513,763'Silicon carbide semiconductor device'20138,461,632'SiC semiconductor device and method of manufacturing the same'20138,350,353'Method of manufacturing silicon carbide semiconductor device'20138,258,052'Method of manufacturing silicon carbide semiconductor device'20128,252,672'Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the same'20128,143,094'Silicon carbide semiconductor device and manufacturing method thereof'20128,115,211'Silicon carbide semiconductor device and manufacturing method thereof'20128,084,278'Method of manufacturing silicon carbide semiconductor device'20118,026,160'Semiconductor device and semiconductor device manufacturing method'20117,939,943'Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer'20117,919,403'Method of manufacturing silicon carbide semiconductor device'20117,678,597'Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact'20107,564,072'Semiconductor device having junction termination extension'20097,285,465'Method of manufacturing a SiC vertical MOSFET'20077,029,969'Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angle'20066,307,232'Semiconductor device having lateral high breakdown voltage element'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2021Patents assigned to MITSUBISHI ELECTRIC CORP (41)· patent assignee history
2001Based in Hyogo, JP· patent location history
2006–2021Based in Tokyo, JP· patent location history
2011–2016Patents assigned to TARUI YOICHIRO (16)· patent assignee history
2011–2014Based in Chiyoda-ku, JP· patent location history
2012–2016Patents assigned to IMAIZUMI MASAYUKI (3)· patent assignee history
2012–2016Patents assigned to MIURA NARUHISA (3)· patent assignee history
2014Patents assigned to MATSUNO YOSHINORI (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 41 | 2001–2021 |
| TARUI YOICHIROself | 16 | 2011–2016 |
| IMAIZUMI MASAYUKI | 3 | 2012–2016 |
| MIURA NARUHISA | 3 | 2012–2016 |
| MATSUNO YOSHINORI | 2 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 36 | 2006–2021 |
| Chiyoda-ku, JP | 5 | 2011–2014 |
| Hyogo, JP | 1 | 2001 |