Inventor
Jang Uk Lee
Inventor
Gyeonggi-do, KR
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices28%
H10NElectric solid-state devices not otherwise provided for28%
H10DInorganic electric semiconductor devices13%
G11CStatic stores10%
H01LSemiconductor devices7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G06FElectric digital data processing2%
G06TImage data processing or generation, in general2%
G09GArrangements or circuits for control of indicating devices using static means to present variable information2%
H01QAntennas, i.e. radio aerials2%
PatentTitleYear
11,056,787Hybrid antenna202110,971,112Dynamically-themed display utilizing physical ambient conditions20219,786,766'Methods of fabricating transistors with a protection layer to improve the insulation between a gate electrode and a junction region'20179,087,986'Semiconductor memory device having dummy conductive patterns on interconnection and fabrication method thereof'20158,921,180'High-integration semiconductor memory device and method of manufacturing the same'20148,883,590'Phase change memory apparatus and fabrication method thereof'20148,796,781'High-integration semiconductor memory device and method of manufacturing the same'20148,759,979'Semiconductor memory device having dummy conductive patterns on interconnection'20148,675,402'Nonvolatile memory cell, nonvolatile memory device and method for driving the same'20148,586,443'Method of fabricating phase change memory device capable of reducing disturbance'20138,570,796'Nonvolatile memory cell, nonvolatile memory device and method for driving the same'20138,498,147'Nonvolatile memory cell, nonvolatile memory device and method for driving the same'20138,415,197'Phase change memory device having an improved word line resistance, and methods of making same'20138,368,178'Phase change memory apparatus and fabrication method thereof'20138,349,636'Method of manufacturing a phase change memory device using a cross patterning technique'20138,334,526'Phase change memory device capable of reducing disturbance'20128,289,761'Nonvolatile memory cell, nonvolatile memory device and method for driving the same'20128,283,651'Phase change memory device having an improved word line resistance, and methods of making same'20128,252,623'Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof'20128,219,038'Method and apparatus for improving broadcasting reception performance of portable terminal'20128,124,951'Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2014Patents assigned to LEE JANG UK (10)· patent assignee history
2012–2017Patents assigned to SK HYNIX INC (10)· patent assignee history
2012–2014Patents assigned to HYNIX SEMICONDUCTOR INC (8)· patent assignee history
2012–2014Patents assigned to CHOI KANG SIK (4)· patent assignee history
2012–2014Patents assigned to DO GAP-SOK (4)· patent assignee history
2012–2017Based in Gyeonggi-do, KR· patent location history
2012Based in Suwon-si, KR· patent location history
2014Based in Icheon-si, KR· patent location history
2021Based in Seoul, KR· patent location history
2021Based in Walldorf, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LEE JANG UKself | 10 | 2012–2014 |
| SK HYNIX INC | 10 | 2012–2017 |
| HYNIX SEMICONDUCTOR INC | 8 | 2012–2014 |
| CHOI KANG SIK | 4 | 2012–2014 |
| DO GAP-SOK | 4 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 16 | 2012–2017 |
| Icheon-si, KR | 2 | 2014 |
| Seoul, KR | 1 | 2021 |
| Walldorf, DE | 1 | 2021 |
| Suwon-si, KR | 1 | 2012 |