LexDanaLexDanabeta
Inventor

Michael R. Krames

Inventor
Mountain View, CA, US

Overview

168→
Patents
1995–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 168 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01LSemiconductor devices8%
F21VFunctional features or details of lighting devices or systems thereof6%
F21KNon-electric light sources using luminescence5%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted5%
H05BElectric heating4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
11,105,473LED lamps with improved quality of light202110,955,608Circadian-friendly LED light sources202110,900,615Circadian-friendly LED light source202110,847,625Indium-gallium-nitride structures and devices202010,830,405Sunlight-based large area light source and large area luminaire202010,700,244System and method for selected pump LEDs with multiple phosphors202010,693,041High-performance LED fabrication202010,677,981Large area light source and large area luminaire202010,557,595LED lamps with improved quality of light202010,553,754Power light emitting diode and method with uniform current density operation202010,529,902Small LED source with high brightness and high efficiency202010,436,422Multi-function active accessories for LED lamps201910,324,250Circadian-friendly LED light sources201910,312,404Semiconductor light emitting device growing active layer on textured surface201910,312,422Light emitting devices with optical elements and bonding layers201910,290,775Luminescent ceramic for a light emitting device201910,168,009LED lamps with improved quality of light201910,147,850System and method for providing color light sources in proximity to predetermined wavelength conversion structures201810,139,056LED lamps with improved quality of light201810,137,277Circadian-friendly LED light source201810,115,865High-performance LED fabrication201810,087,550Reusable nitride wafer, method of making, and use thereof201810,084,121Small LED source with high brightness and high efficiency201810,076,633Circadian-friendly LED light source20189,995,439Glare reduced compact lens for high intensity light source20189,985,179Power light emitting diode and method with uniform current density operation20189,978,904Indium gallium nitride light emitting devices20189,915,775'Circadian-friendly LED light sources'20189,911,896'Semiconductor light emitting device growing active layer on textured surface'20189,831,388High-performance LED fabrication20179,768,353'Power light emitting diode and method with uniform current density operation'20179,722,148'Luminescent ceramic for a light emitting device'20179,677,723'LED lamps with improved quality of light'20179,660,152'System and method for selected pump LEDs with multiple phosphors'20179,653,554'Reusable nitride wafer, method of making, and use thereof'20179,650,723'Large area seed crystal for ammonothermal crystal growth and method of making'20179,640,724'III-nitride light emitting device with double heterostructure light emitting region'20179,618,183'Apportioning optical projection paths in an LED lamp'20179,589,792'High quality group-III metal nitride crystals, methods of making, and methods of use'20179,583,683'Light emitting devices with optical elements and bonding layers'20179,583,678'High-performance LED fabrication'20179,564,553'Power light emitting diode and method with uniform current density operation'20179,435,525'Multi-part heat exchanger for LED lamps'20169,419,189'Small LED source with high brightness and high efficiency'20169,410,664'Circadian friendly LED light source'20169,368,695'LED lamps with improved quality of light'20169,359,260'Luminescent ceramic for a light emitting device'20169,360,190'Compact lens for high intensity light source'20169,293,667'System and method for selected pump LEDs with multiple phosphors'20169,293,644'Power light emitting diode and method with uniform current density operation'20169,267,661'Apportioning optical projection paths in an LED lamp'20169,117,944'Semiconductor light emitting devices grown on composite substrates'2015D0736724'LED lamp with accessory'2015D0736723'LED lamp'20159,046,227'LED lamps with improved quality of light'2015D0730302'Heat sink'20159,000,450'Grown photonic crystals in semiconductor light emitting devices'20158,985,794'Providing remote blue phosphors in an LED lamp'20158,933,644'LED lamps with improved quality of light'20158,911,518'Method and system for dicing substrates containing gallium and nitrogen material with conductive core via structures'20148,905,588'System and method for providing color light sources in proximity to predetermined wavelength conversion structures'20148,884,517'Illumination sources with thermally-isolated electronics'20148,847,252'III-nitride light emitting device with double heterostructure light emitting region'20148,846,423'Bonding an optical element to a light emitting device'20148,748,912'Common optical element for an array of phosphor converted light emitting devices'20148,748,923'Wavelength-converted semiconductor light emitting device'20148,740,413'System and method for providing color light sources in proximity to predetermined wavelength conversion structures'20148,686,458'Power light emitting diode and method with current density operation'20148,679,869'Contact for a semiconductor light emitting device'20148,628,985'Light emitting devices with improved light extraction efficiency'20148,597,967'Method and system for dicing substrates containing gallium and nitrogen material'20138,502,465'Power light emitting diode and method with current density operation'20138,492,244'Methods for relaxation and transfer of strained layers and structures fabricated thereby'20138,486,771'Methods of forming relaxed layers of semiconductor materials, semiconductor structures, devices and engineered substrates including same'20138,481,408'Relaxation of strained layers'20138,482,104'Method for growth of indium-containing nitride films'20138,471,280'Silicone based reflective underfill and thermal coupler'20138,455,913'Package-integrated thin film LED'20138,450,754'Series connected flip chip LEDs with growth substrate removed'20138,445,929'Wavelength-converted semiconductor light emitting device'20138,415,694'Light emitting devices with improved light extraction efficiency'20138,334,543'III-V light emitting device including a light extracting structure'20128,334,155'Substrate for growing a III-V light emitting device'20128,288,186'Substrate for growing a III-V light emitting device'20128,278,674'Luminescent ceramic element for a light emitting device'20128,203,153'III-V light emitting device including a light extracting structure'20128,174,025'Semiconductor light emitting device including porous layer'20128,163,575'Grown photonic crystals in semiconductor light emitting devices'20128,153,475'Back-end processes for substrates re-use'20128,114,692'Light source including a wavelength-converted semiconductor light emitting device and a filter'20128,105,852'Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate'20128,080,828'Low profile side emitting LED with window layer and phosphor layer'20118,067,254'Common optical element for an array of phosphor converted light emitting devices'20118,062,916'Series connected flip chip LEDs with growth substrate removed'20118,053,905'Compliant bonding structures for semiconductor devices'20118,049,234'Light emitting devices with improved light extraction efficiency'20118,039,866'Mount for a semiconductor light emitting device'20117,981,767'Methods for relaxation and transfer of strained layers and structures fabricated thereby'20117,902,564'Multi-grain luminescent ceramics for light emitting devices'20117,888,691'Light source including a wavelength-converted semiconductor light emitting device and a filter'20117,880,186'III-nitride light emitting device with double heterostructure light emitting region'20117,875,533'Package-integrated thin film LED'20117,875,984'Complaint bonding structures for semiconductor devices'20117,863,631'A1InGaP LED having reduced temperature dependence'20117,808,011'Semiconductor light emitting devices including in-plane light emitting layers'20107,804,100'Polarization-reversed III-nitride light emitting device'20107,791,096'Mount for a semiconductor light emitting device'20107,675,084'Photonic crystal light emitting device'20107,663,148'III-nitride light emitting device with reduced strain light emitting layer'20107,642,108'LED including photonic crystal structure'20107,626,210'Low profile side emitting LED'20097,601,989'LED with porous diffusing reflector'20097,544,525'AllnGaP LED having reduced temperature dependence'20097,514,721'Luminescent ceramic element for a light emitting device'20097,491,565'III-nitride light emitting devices fabricated by substrate removal'20097,488,621'Package-integrated thin film LED'20097,442,965'Photonic crystal light emitting device'20087,419,839'Bonding an optical element to a light emitting device'20087,408,201'Polarized semiconductor light emitting device'20087,402,840'Selective filtering of wavelength-converted semiconductor light emitting devices'20087,361,938'Luminescent ceramic for a light emitting device'20087,341,878'Wavelength-converted semiconductor light emitting device'20087,294,862'Photonic crystal light emitting device'20077,279,718'LED including photonic crystal structure'20077,279,345'Method of forming light emitting devices with improved light extraction efficiency'20077,268,371'Light extraction from a semiconductor light emitting device via chip shaping'20077,256,483'Package-integrated thin film LED'20077,244,630'A1InGaP LED having reduced temperature dependence'20077,221,000'Reverse polarization light emitting region for a semiconductor light emitting device'20077,122,839'Semiconductor light emitting devices with graded composition light emitting layers'20067,087,941'lll-phosphide light emitting devices with thin active layers'20067,064,355'Light emitting diodes with improved light extraction efficiency'20067,053,419'Light emitting diodes with improved light extraction efficiency'20067,026,663'Selective filtering of wavelength-converted semiconductor light emitting devices'20067,015,054'Semiconductor light emitting device and method'20067,012,279'Photonic crystal light emitting device'20066,995,389'Heterostructures for III-nitride light emitting devices'20066,992,334'Multi-layer highly reflective ohmic contacts for semiconductor devices'20066,989,555'Strain-controlled III-nitride light emitting device'20066,956,246'Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal'20056,946,309'III-Phosphide and III-Arsenide flip chip light-emitting devices'20056,903,376'Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction'20056,849,472'Nitride semiconductor device with reduced polarization fields'20056,847,057'Semiconductor light emitting devices'20056,844,571'III-nitride light-emitting device with increased light generating capability'20056,800,500'III-nitride light emitting devices fabricated by substrate removal'20046,784,463'III-Phospide and III-Arsenide flip chip light-emitting devices'20046,744,077'Selective filtering of wavelength-converted semiconductor light emitting devices'20046,683,327'Nucleation layer for improved light extraction from light emitting devices'20046,649,440'Aluminum indium gallium nitride-based LED having thick epitaxial layer for improved light extraction'20036,646,292'Semiconductor light emitting device and method'20036,642,652'Phosphor-converted light emitting device'20036,576,488'Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor'20036,570,190'LED having angled sides for increased side light extraction'20036,525,335'Light emitting semiconductor devices including wafer bonded heterostructures'20036,521,914'III-Nitride Light-emitting device with increased light generating capability'20036,514,782'Method of making a III-nitride light-emitting device with increased light generating capability'20036,504,171'Chirped multi-well active region LED'20036,486,499'III-nitride light-emitting device with increased light generating capability'20026,420,199'Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks'20026,323,063'Forming LED having angled sides for increased side light extraction'20016,320,206'Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks'20016,280,523'Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting'20016,229,160'Light extraction from a semiconductor light-emitting device via chip shaping'20016,133,589'AlGaInN-based LED having thick epitaxial layer for improved light extraction'20006,046,465'Buried reflectors for light emitters in epitaxial material and method for producing same'20005,779,924'Ordered interface texturing for a light emitting device'19985,400,354'Laminated upper cladding structure for a light-emitting device'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2021Based in Mountain View, CA, US· patent location history
2000–2006Patents assigned to LUMILEDS LIGHTING LLC (33)· patent assignee history
2006–2015Patents assigned to PHILIPS LUMILEDS LIGHTING CO (50)· patent assignee history
2007–2020Based in Los Altos, CA, US· patent location history
2009–2014Patents assigned to KONINKL PHILIPS ELECTRONICS NV (21)· patent assignee history
2011–2018Patents assigned to KRAMES MICHAEL R (34)· patent assignee history
2013–2021Patents assigned to SORAA INC (53)· patent assignee history
2013–2018Based in Fremont, CA, US· patent location history
2013–2014Based in Goleta, CA, US· patent location history
2020Based in Palo Alto, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SORAA INC532013–2021
PHILIPS LUMILEDS LIGHTING CO502006–2015
KRAMES MICHAEL Rself342011–2018
LUMILEDS LIGHTING LLC332000–2006
KONINKL PHILIPS ELECTRONICS NV212009–2014
Locations
LocationPatentsSpan
Mountain View, California, US1101998–2021
Los Altos, California, US442007–2020
Fremont, California, US102013–2018
Goleta, California, US22013–2014
Palo Alto, California, US12020