LexDanaLexDanabeta
Inventor

Chunhyung Chung

Inventor
Seoul, KR

Overview

6→
Patents
2012–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10BElectronic memory devices17%
C23CCoating metallic material8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
PatentTitleYear
10,868,016Semiconductor memory device and method of fabricating the same202010,833,088Semiconductor memory device and method of fabricating the same202010,707,216Semiconductor device and method for manufacturing the same202010,431,680Semiconductor device and method for manufacturing the same201910,373,959Semiconductor memory device and method of fabricating the same20198,105,930'Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2012Patents assigned to CHOI HOONSANG (1)· patent assignee history
2012Patents assigned to CHUNG CHUNHYUNG (1)· patent assignee history
2012Patents assigned to KIM SUNJUNG (1)· patent assignee history
2012Patents assigned to KIM YOUNGSUN (1)· patent assignee history
2012Based in Yongin-si, KR· patent location history
2019–2020Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD62012–2020
CHOI HOONSANG12012
CHUNG CHUNHYUNGself12012
KIM SUNJUNG12012
KIM YOUNGSUN12012
Locations
LocationPatentsSpan
Seoul, KR52019–2020
Yongin-si, KR12012