LexDanaLexDanabeta
Inventor

Masayuki Endo

Inventor
Osaka, JP

Overview

169→
Patents
1980–2021
Patent span
Physics
Primary field (CPC G)

Patents· 169 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices39%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds7%
C07CAcyclic or carbocyclic compounds3%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
C08LCompositions of macromolecular compounds1%
C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients1%
C23CCoating metallic material1%
PatentTitleYear
10,992,174Monitoring control system202110,690,685Mechanochemical platform and sensing methods using DNA origami nanostructures202010,423,857Detecting apparatus for detecting subject20199,779,290'Detecting apparatus, detecting method and computer readable recording medium recording program for detecting state in predetermined area within images'20179,708,696'Steel wire material and method for manufacturing same'20178,591,822'Ozone generating apparatus'20138,409,783'Copolymer, resin composition, spacer for display panel, planarization film, thermosetting protective film, microlens, and process for producing copolymer'20138,268,535'Pattern formation method'20128,088,565'Exposure system and pattern formation method'20128,080,364'Pattern formation method'20118,043,461'Method for manufacturing fiber reinforced cement board'20117,998,663'Pattern formation method'20117,947,432'Pattern formation method'20117,943,285'Pattern formation method'20117,939,242'Barrier film material and pattern formation method using the same'20117,871,759'Barrier film material and pattern formation method using the same'20117,771,918'Semiconductor manufacturing apparatus and pattern formation method'20107,727,707'Barrier film material and pattern formation method using the same'20107,713,685'Exposure system and pattern formation method'20107,700,268'Exposure system and pattern formation method using the same'20107,666,967'Ester compound, polymer, resist composition, and patterning process'20107,655,385'Pattern formation method'20107,595,142'Pattern formation method'20097,588,876'Resist material and pattern formation method'20097,569,323'Resist protective coating material and patterning process'20097,556,914'Pattern formation method'20097,550,253'Barrier film material and pattern formation method using the same'20097,541,132'Chemically amplified resist material, topcoat film material and pattern formation method using the same'20097,524,772'Pattern formation method'20097,488,567'Polymer, resist composition and patterning process'20097,470,501'Pattern formation method through liquid immersion lithography'20087,462,438'Resist material and pattern formation method using the same'20087,455,950'Resist material and pattern formation method using the same'20087,429,778'Methods for forming wiring and electrode'20087,413,843'Sulfonamide compound, polymer compound, resist material and pattern formation method'20087,393,794'Pattern formation method'20087,378,216'Resist material and pattern formation method'20087,378,229'Pattern formation method'20087,378,218'Polymer, resist composition and patterning process'20087,374,857'Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition'20087,338,743'Resist material and pattern formation method'20087,314,703'Chemically amplified resist material and pattern formation method using the same'20087,273,820'Method for fabricating semiconductor device'20077,255,974'Pattern formation method'20077,241,553'Polymer, resist composition, and patterning process'2007D0543625'Syringe'2007D0543278'Syringe'2007D0543279'Syringe'20077,198,888'Water-soluble material, chemically amplified resist and pattern formation method using the same'20077,195,860'Semiconductor manufacturing apparatus and pattern formation method'20077,169,530'Polymer compound, resist material and pattern formation method'20077,169,869'Polymers, resist compositions and patterning process'20077,166,418'Sulfonamide compound, polymer compound, resist material and pattern formation method'20077,135,273'Pattern formation method'20067,132,224'Pattern formation method'20067,125,643'Polymers, resist compositions and patterning process'20067,125,641'Polymers, resist compositions and patterning process'20067,125,642'Sulfonates, polymers, resist compositions and patterning process'20067,094,521'Pattern formation method and exposure system'20067,078,147'Polymers, resist compositions and patterning process'20067,071,084'Methods for forming wiring and electrode'20067,067,231'Polymers, resist compositions and patterning process'20067,060,775'Polymer compound, resist material and pattern formation method'20067,041,428'Pattern-forming material and method of forming pattern'20067,029,827'Pattern formation method'20067,022,466'Pattern formation method'20067,011,934'Pattern formation method'20067,005,228'Polymers, resist compositions and patterning process'20067,001,707'Resist compositions and patterning process'20066,992,015'Pattern formation method'20066,949,329'Pattern formation method'20056,946,235'Polymers, resist compositions and patterning process'20056,936,401'Pattern formation material and pattern formation method'20056,933,095'Polymers, resist compositions and patterning process'20056,916,592'Esters, polymers, resist compositions and patterning process'20056,913,857'Exposure mask, method for manufacturing the mask, and exposure method'20056,913,873'Pattern formation method'20056,908,729'Pattern formation method'20056,902,999'Pattern formation method'20056,875,556'Resist compositions and patterning process'20056,872,514'Polymers, resist compositions and patterning process'20056,864,037'Polymers, resist compositions and patterning process'20056,861,197'Polymers, resist compositions and patterning process'20056,855,477'Chemically amplified resist compositions and patterning process'20056,841,488'Pattern formation method'20056,830,869'Pattern forming material and method of pattern formation'20046,824,955'Polymers, resist compositions and patterning process'20046,806,029'Pattern formation material and pattern formation method'20046,797,450'Radiation-sensitive composition, insulating film and organic EL display element'20046,790,586'Resist compositions and patterning process'20046,764,811'Pattern formation method'20046,756,165'Radiation sensitive resin composition for forming barrier ribs for an EL display element, barrier rib and EL display element'20046,753,132'Pattern formation material and pattern formation method'20046,716,730'Pattern formation method'20046,710,148'Polymers, resist compositions and patterning process'20046,689,536'Pattern formation material and pattern formation method'20046,660,447'Polymers, resist compositions and patterning process'20036,645,694'Pattern formation material and pattern formation method'20036,603,037'Ester compounds'20036,582,880'Polymers, resist compositions and patterning process'20036,511,786'Pattern formation material and pattern formation method'20036,511,787'Polymers, resist compositions and patterning process'20036,429,143'Pattern formation method'20026,399,267'Radiation sensitive resin composition and use of the same in an interlaminar insulating film'20026,387,598'Pattern forming material and pattern forming method'20026,387,592'Pattern forming material and pattern forming method'20026,376,154'Pattern forming material and pattern forming method'20026,358,645'Non-aqueous electrolyte secondary battery'20026,342,716'Semiconductor device having dot elements as floating gate'20026,335,143'Resist composition containing specific cross-linking agent'20026,331,378'Pattern forming method'20016,306,556'Pattern forming material and pattern forming method'20016,303,516'Method for forming dot element'20016,261,736'Pattern forming material and pattern forming method'20016,258,972'Pattern formation method and surface treating agent'20016,174,650'Manufacturing method and apparatus for semiconductor device'20016,168,908'Process for forming a cured film of a thermoplastic resin'20016,133,465'Pattern formation method and surface treatment agent'20006,120,974'Pattern forming material and pattern forming method'20006,074,804'Pattern formation method'20006,054,255'Pattern formation method and surface treating agent'20006,017,683'Pattern forming material and pattern forming method'20005,965,325'Pattern forming material and pattern forming method'19995,958,648'Radiation sensitive resin composition'19995,928,840'Patterning material and patterning method'19995,866,302'Pattern formation method'19995,856,069'Method for forming pattern'19995,846,692'Pattern formation method'19985,795,828'Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device'19985,773,174'Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and surface modification layer width'19985,756,242'Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and exposure parameter'19985,756,262'Method for forming pattern'19985,741,628'Method of forming micropatterns by having a resist film absorb water'19985,679,500'Method of forming micropatterns utilizing silylation and overall energy beam exposure'19975,677,112'Process for forming a pattern on a semiconductor substrate using a deep ultraviolet absorbent composition'19975,658,711'Method of forming micropatterns'19975,645,628'Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device'19975,576,359'Deep ultraviolet absorbent composition'19965,576,247'Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture'19965,569,628'Semiconductor device fabrication method'19965,558,976'Pattern formation method'19965,558,971'Resist material'19965,530,036'Epoxy group-containing copolymer and radiation sensitive resin compositions thereof'19965,525,457'Reflection preventing film and process for forming resist pattern using the same'19965,476,753'Fine pattern forming method'19955,472,826'Semiconductor device fabrication method'19955,432,039'Radiation sensitive quinone diazide and resin composition for microlens'19955,401,932'Method of producing a stencil mask'19955,399,604'Epoxy group-containing resin compositions'19955,389,491'Negative working resist composition'19955,364,910'Material for forming coating film'19945,316,891'Fine pattern forming method'19945,312,776'Method of preventing the corrosion of metallic wirings'19945,272,036'Pattern forming contrast enhanced material utilizing water soluble photosensitive diazo compound and pattern forming method'19935,250,669'Photosensitive compound'19935,169,741'Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent'19924,923,948'Curable composition'19904,910,123'Pattern forming method'19904,849,323'Pattern forming method using contrast enhanced material'19894,841,341'Integrator for an exposure apparatus or the like'19894,840,872'Pattern forming method by use of X-ray exposure'19894,812,880'Exposure apparatus'19894,805,002'Exposure apparatus'19894,805,000'Exposure apparatus'19894,782,368'Method for correction for chromatic aberration and exposure apparatus using the same'19884,745,042'Water-soluble photopolymer and method of forming pattern by use of the same'19884,724,466'Exposure apparatus'19884,696,800'Ozone generating apparatus'19874,182,813'Process for the preparation of 1,2-polybutadiene'1980

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1980–1996Based in Yokohama, JP· patent location history
1988–2008Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (104)· patent assignee history
1988–2008Based in Izumi, JP· patent location history
1993–2008Patents assigned to WAKO PURE CHEM IND LTD (9)· patent assignee history
1994–2012Based in Osaka, JP· patent location history
2000–2010Patents assigned to SHINETSU CHEMICAL CO (20)· patent assignee history
2002–2013Based in Tokyo, JP· patent location history
2003–2010Patents assigned to CENTRAL GLASS CO LTD (26)· patent assignee history
2005–2007Based in Kishiwada, JP· patent location history
2008–2012Patents assigned to PANASONIC CORP (25)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1041988–2008
CENTRAL GLASS CO LTD262003–2010
PANASONIC CORP252008–2012
SHINETSU CHEMICAL CO202000–2010
WAKO PURE CHEM IND LTD91993–2008
Locations
LocationPatentsSpan
Osaka, JP901994–2012
Izumi, JP401988–2008
Kishiwada, JP92005–2007
Yokohama, JP71980–1996
Tokyo, JP32002–2013