Inventor
Yasuhiro Shiraki
Inventor
Hino, JP
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices24%
B82YSpecific uses or applications of nanostructures12%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
H05KPrinted circuits4%
B60LPropulsion of electrically-propelled vehicles2%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for2%
PatentTitleYear
10,366,826Dual-mode choke coil and high-frequency filter using same, and on-board motor integrated electric power steering and on-board charging device20199,271,432'Power conversion device with reduced noise source current, reduced high frequency current and reduced resonance current'20167,187,225'Electronic control unit'20076,969,808'Multi-layer printed board'20055,837,565'Semiconductor device'19985,831,296'Semiconductor device'19985,491,709'Semiconductor laser device'19965,425,041'Multiquantum barrier laser having high electron and hole reflectivity of layers'19955,236,547'Method of forming a pattern in semiconductor device manufacturing process'19935,047,111'Method of forming a metal silicide film'19914,904,989'Display device'19904,835,583'Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate'19894,805,005'Semiconductor device and manufacturing method of the same'19894,796,068'Semiconductor device having ultrahigh-mobility'19894,785,340'Semiconductor device having doping multilayer structure'19884,759,030'Semiconductor laser'19884,673,959'Heterojunction FET with doubly-doped channel'19874,672,406'Semiconductor member and semiconductor device employing the same'19874,605,945'Semiconductor device'19864,559,547'Semiconductor device'19854,433,202'Thin film solar cell'19844,351,856'Semiconductor device and method of manufacturing the same'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–1998Patents assigned to HITACHI LTD (13)· patent assignee history
1982–1998Based in Hino, JP· patent location history
1988–1991Patents assigned to AGENCY IND SCIENCE TECHN (2)· patent assignee history
1988–2016Based in Tokyo, JP· patent location history
1995–1996Patents assigned to FUJI XEROX CO LTD (2)· patent assignee history
1996–2016Patents assigned to SHIRAKI YASUHIRO (2)· patent assignee history
2005–2019Patents assigned to MITSUBISHI ELECTRIC CORP (4)· patent assignee history
2005Based in Hyogo, JP· patent location history
2019Based in Chiyoda-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 13 | 1982–1998 |
| MITSUBISHI ELECTRIC CORP | 4 | 2005–2019 |
| AGENCY IND SCIENCE TECHN | 2 | 1988–1991 |
| FUJI XEROX CO LTD | 2 | 1995–1996 |
| SHIRAKI YASUHIROself | 2 | 1996–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hino, JP | 14 | 1982–1998 |
| Tokyo, JP | 6 | 1988–2016 |
| Chiyoda-ku, JP | 1 | 2019 |
| Hyogo, JP | 1 | 2005 |