Inventor

Han-Chin Chiu

Inventor

Kaohsiung, TW

Overview

2014–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices35%

H01LSemiconductor devices32%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%

B81BMicrostructural devices or systems, e.g. micromechanical devices1%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%

H01GCapacitors1%

PatentTitleYear

10,868,136Sidewall passivation for HEMT devices2020 10,847,316MIM device with laminated dielectric layers2020 10,522,647Sidewall passivation for HEMT devices2019 10,522,645Surface treatment and passivation for high electron mobility transistors2019 10,269,948High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof2019 10,170,579Surface treatment and passivation for high electron mobility transistors2019 10,164,038Method of implanting dopants into a group III-nitride structure and device formed2018 10,157,994High electron mobility transistor and method of forming the same2018 10,020,376Sidewall passivation for HEMT devices2018 9,978,844HEMT-compatible lateral rectifier structure2018 9,941,398High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer2018 9,899,493'High electron mobility transistor and method of forming the same'2018 9,876,093High electron mobility transistor and method of forming the same2018 9,847,401Semiconductor device and method of forming the same2017 9,685,525'Sidewall passivation for HEMT devices'2017 9,666,683'Surface treatment and passivation for high electron mobility transistors'2017 9,633,920'Low damage passivation layer for III-V based devices'2017 9,601,608'Structure for a gallium nitride (GaN) high electron mobility transistor'2017 9,564,330'Normally-off enhancement-mode MISFET'2017 9,525,054'High electron mobility transistor and method of forming the same'2016 9,449,867'VHF etch barrier for semiconductor integrated microsystem'2016 9,425,301'Sidewall passivation for HEMT devices'2016 9,373,689'High electron mobility transistor and method of forming the same'2016 9,236,464'Method of forming a high electron mobility transistor'2016 9,224,847'High electron mobility transistor and method of forming the same'2015 9,214,539'Gallium nitride transistor with a hybrid aluminum oxide layer as a gate dielectric'2015 9,130,026'Crystalline layer for passivation of III-N surface'2015 8,912,570'High electron mobility transistor and method of forming the same'2014 8,884,268'Diffusion barrier layer for group III nitride on silicon substrate'2014 8,803,158'High electron mobility transistor and method of forming the same'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history

2014Patents assigned to CHEN CHI-MING (2)· patent assignee history

2014Patents assigned to CHIU HAN-CHIN (2)· patent assignee history

2014Patents assigned to YU CHUNG-YI (2)· patent assignee history

2014–2020Based in Kaohsiung, TW· patent location history

2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	24	2015–2020
TAIWAN SEMICONDUCTOR MFG	6	2014–2016
CHEN CHI-MING	2	2014
CHIU HAN-CHINself	2	2014
YU CHUNG-YI	2	2014

Locations

Location	Patents	Span
Kaohsiung, TW	30	2014–2020