Inventor
David K. Watts
Inventor
Austin, TX, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B24Bprimary
B24BMachines, devices, or processes for grinding or polishing20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
C02FTreatment of water, waste water, sewage, or sludge6%
C09GPolishing compositions6%
C23FNon-mechanical removal of metallic material from surface6%
C25DProcesses for the electrolytic or electrophoretic production of coatings6%
Y10TTechnical subjects covered by former us classification6%
B05CApparatus for applying fluent materials to surfaces, in general3%
B23HWorking of metal by the action of a high concentration of electric current on a workpiece using an electrode which takes the place of a tool3%
PatentTitleYear
8,137,158'Electrical contact method'20127,883,395'Electrical contact structures and methods for use'20117,820,051'Recycling of electrochemical-mechanical planarization (ECMP) slurries/electrolytes'20107,807,036'Method and system for pad conditioning in an ECMP process'20107,544,609'Method for integrating liner formation in back end of line processing'20096,379,463'Web coating material supply apparatus and method'20026,372,111'Method and apparatus for reclaiming a metal from a CMP process for use in an electroplating process'20026,362,103'Method and apparatus for rejuvenating a CMP chemical solution'20026,096,652'Method of chemical mechanical planarization using copper coordinating ligands'20006,071,816'Method of chemical mechanical planarization using a water rinse to prevent particle contamination'20006,045,435'Low selectivity chemical mechanical polishing (CMP) process for use on integrated circuit metal interconnects'20006,001,730'Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers'19995,985,748'Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process'19995,935,871'Process for forming a semiconductor device'19995,897,375'Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2000Patents assigned to MOTOROLA INC (7)· patent assignee history
1999–2000Based in Austin, TX, US· patent location history
2002Patents assigned to ROYSE MFG CO (1)· patent assignee history
2002Based in Hayward, CA, US· patent location history
2002Based in Midlothian, TX, US· patent location history
2009–2012Patents assigned to IBM (5)· patent assignee history
2009–2012Based in Hopewell Junction, NY, US· patent location history
2012Patents assigned to FANG RUI (1)· patent assignee history
2012Patents assigned to KULKARNI DEEPAK (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOTOROLA INC | 7 | 1999–2000 |
| IBM | 5 | 2009–2012 |
| FANG RUI | 1 | 2012 |
| KULKARNI DEEPAK | 1 | 2012 |
| ROYSE MFG CO | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Austin, Texas, US | 7 | 1999–2000 |
| Hopewell Junction, New York, US | 5 | 2009–2012 |
| Hayward, California, US | 2 | 2002 |
| Midlothian, Texas, US | 1 | 2002 |