Inventor
Alexander Philippou
Inventor
Munich, DE
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices34%
H10DInorganic electric semiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10BElectronic memory devices5%
G01RMeasuring electric variables2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
H03KPulse technique2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
11,114,528Power transistor with dV/dt controllability and tapered mesas202111,075,290Power semiconductor device having a cross-trench arrangement202110,978,560Power semiconductor device with dV/dt controllability and low gate charge202110,930,772IGBT having a barrier region202110,910,487Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the same202110,854,739Method for producing IGBT with dV/dt controllability202010,840,362IGBT with dV/dt controllability202010,658,457Power semiconductor device having an SOI island202010,615,272Method for producing IGBT with dV/dt controllability202010,608,104Trench transistor device202010,439,055IGBT with dV/dt controllability201910,424,645Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device201910,347,754Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the same201910,304,952Power semiconductor device with dV/dt controllability and cross-trench arrangement201910,256,299SOI island in a power semiconductor device201910,109,624Semiconductor device comprising transistor cell units with different threshold voltages201810,096,531Semiconductor device with sensor potential in the active region20189,691,887'Semiconductor device with variable resistive element'20179,653,568'Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structures'20179,553,179'Semiconductor device and insulated gate bipolar transistor with barrier structure'20179,076,838'Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing'20159,018,674'Reverse conducting insulated gate bipolar transistor'20157,270,922'Method for determining an edge profile of a volume of a photoresist after a development process'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2021Patents assigned to INFINEON TECHNOLOGIES AG (22)· patent assignee history
2007Based in Dresden, DE· patent location history
2015Patents assigned to HIRLER FRANZ (1)· patent assignee history
2015–2021Based in Munich, DE· patent location history
2019Patents assigned to INFINEON TECHNOLOGIES DRESDEN GMBH (1)· patent assignee history
2021Patents assigned to INFINEON TECH DRESDEN GMBH & CO KG (1)· patent assignee history
2021Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 22 | 2007–2021 |
| HIRLER FRANZ | 1 | 2015 |
| INFINEON TECH DRESDEN GMBH & CO KG | 1 | 2021 |
| INFINEON TECHNOLOGIES AUSTRIA AG | 1 | 2021 |
| INFINEON TECHNOLOGIES DRESDEN GMBH | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 22 | 2015–2021 |
| Dresden, DE | 1 | 2007 |